NE3512S02-T1D-A

NE3512S02-T1D-A
Mfr. #:
NE3512S02-T1D-A
제조사:
Rochester Electronics, LLC
설명:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
NE3512S02-T1D-A 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
르네사스
제품 카테고리
IC 칩
포장
장착 스타일
SMD/SMT
패키지 케이스
S0-2
기술
GaAs
트랜지스터형
HFET
얻다
13.5 dB
Pd 전력 손실
165 mW
최대 작동 온도
+ 125 C
동작 주파수
12 GHz
Id-연속-드레인-전류
70 mA
Vds-드레인-소스-고장-전압
4 V
트랜지스터 극성
N-채널
순방향 트랜스컨덕턴스-최소
55 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
NF-노이즈-피겨
0.35 dB
Tags
NE3512S02-T1D-A, NE3512S02-T1D, NE3512S02-T, NE3512, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
***S
new, original packaged
***i-Key
HJ-FET NCH 13.5DB S02
부분 # 제조 설명 재고 가격
NE3512S02-T1D-A
DISTI # 551-NE3512S02-T1D-A
California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
RoHS: Compliant
0
    영상 부분 # 설명
    NE3512S02-T1C-A

    Mfr.#: NE3512S02-T1C-A

    OMO.#: OMO-NE3512S02-T1C-A

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-A

    Mfr.#: NE3512S02-A

    OMO.#: OMO-NE3512S02-A

    RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
    NE3512S02-T1D-A

    Mfr.#: NE3512S02-T1D-A

    OMO.#: OMO-NE3512S02-T1D-A-318

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-T1C-A

    Mfr.#: NE3512S02-T1C-A

    OMO.#: OMO-NE3512S02-T1C-A-CEL

    RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    NE3512S02-T1D-AJT

    Mfr.#: NE3512S02-T1D-AJT

    OMO.#: OMO-NE3512S02-T1D-AJT-1190

    신규 및 오리지널
    NE3512S02

    Mfr.#: NE3512S02

    OMO.#: OMO-NE3512S02-1190

    신규 및 오리지널
    NE3512S02-T1

    Mfr.#: NE3512S02-T1

    OMO.#: OMO-NE3512S02-T1-1190

    신규 및 오리지널
    NE3512S02-T1B

    Mfr.#: NE3512S02-T1B

    OMO.#: OMO-NE3512S02-T1B-1190

    신규 및 오리지널
    NE3512S02-T1C

    Mfr.#: NE3512S02-T1C

    OMO.#: OMO-NE3512S02-T1C-1190

    신규 및 오리지널
    NE3512S02-T1D-A/JT

    Mfr.#: NE3512S02-T1D-A/JT

    OMO.#: OMO-NE3512S02-T1D-A-JT-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    4500
    수량 입력:
    NE3512S02-T1D-A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.88
    US$0.88
    10
    US$0.84
    US$8.41
    100
    US$0.80
    US$79.65
    500
    US$0.75
    US$376.15
    1000
    US$0.71
    US$708.00
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