SI4800BDY-T1-E3

Mfr. #:: SI4800BDY-T1-E3
제조사:: Vishay
설명:: MOSFET N-CH 30V 6.5A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4800BDY-T1-E3 데이터 시트
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ECAD Model:
추가 정보:: SI4800BDY-T1-E3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI4800BDY-T1

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-SO

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 1.3W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 6.5A (Ta)

Rds-On-Max-Id-Vgs: 18.5 mOhm @ 9A, 10V

Vgs-th-Max-Id: 1.8V @ 250μA

Gate-Charge-Qg-Vgs: 13nC @ 5V

Pd 전력 손실: 1.3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 12 ns

상승 시간: 12 ns

Vgs 게이트 소스 전압: 25 V

Id-연속-드레인-전류: 6.5 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 18.5 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 32 ns

일반 켜기 지연 시간: 7 ns

채널 모드: 상승

Tags: SI4800BDY-T1-E3, SI4800BDY-T1-E, SI4800BDY-T1, SI4800BDY-T, SI4800BDY, SI4800BD, SI4800B, SI4800, SI480, SI48, SI4

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4800BDY-T1-E3 설명

***ied Electronics & Automation: SI4800BDY-T1-E3 N-channel MOSFET Transistor; 6.5 A; 30 V; 8-Pin SOIC

***ical: Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R

***nell: N CHANNEL MOSFET, 30V, 9A, SOIC

***ronik: N-CH 30V 9A 19mOhm SO-8 RoHSconf

***ure Electronics: N-CH REDUCED QG, FAST SWITCHING MOSF

***ment14 APAC: N CHANNEL MOSFET, 30V, 9A, SOIC; Transis; N CHANNEL MOSFET, 30V, 9A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):18.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:8

SI4800BDY-T1-E3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4800BDY-T1-E3 DISTI # V72:2272_09216568	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant	390	250:$0.4116 100:$0.4782 25:$0.5928 10:$0.5957 1:$0.6897
SI4800BDY-T1-E3 DISTI # SI4800BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4565In Stock	1000:$0.3484 500:$0.4355 100:$0.5880 10:$0.7620 1:$0.8700
SI4800BDY-T1-E3 DISTI # SI4800BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4565In Stock	1000:$0.3484 500:$0.4355 100:$0.5880 10:$0.7620 1:$0.8700
SI4800BDY-T1-E3 DISTI # SI4800BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.3066
SI4800BDY-T1-E3 DISTI # 30150432	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant	390	250:$0.4116 100:$0.4782 25:$0.5928 21:$0.5957
SI4800BDY-T1-E3 DISTI # SI4800BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4800BDY-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 360	1:$0.3169 25:$0.3159 62:$0.3149 125:$0.3139 312:$0.3129 625:$0.3129 1250:$0.3119
SI4800BDY-T1-E3 DISTI # SI4800BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.2999 5000:$0.2989 10000:$0.2979 15000:$0.2979 25000:$0.2969
SI4800BDY-T1-E3 DISTI # SI4800BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3999 5000:€0.2729 10000:€0.2349 15000:€0.2169 25000:€0.2019
SI4800BDY-T1-E3 DISTI # SI4800BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4800BDY-T1-E3 DISTI # 06J7845	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7845) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8800 10:$0.7210 25:$0.6650 50:$0.6090 100:$0.5530 250:$0.5150 500:$0.4760
SI4800BDY-T1-E3 DISTI # 06J7845	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):18.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,No. of Pins:8Pins, RoHS Compliant: Yes	651	1:$0.4550 10:$0.4550 25:$0.4550 50:$0.4170 100:$0.4170 250:$0.4170 500:$0.3850
SI4800BDY-T1-E3. DISTI # 28AC2144	Vishay Intertechnologies	N-CH REDUCED QG, FAST SWITCHING MOSFET , ROHS COMPLIANT: NO	2500	1:$0.3000 5000:$0.2990 10000:$0.2980 25000:$0.2970
SI4800BDY-T1-E3 DISTI # 70026225	Vishay Siliconix	SI4800BDY-T1-E3 N-channel MOSFET Transistor,6.5 A,30 V,8-Pin SOIC RoHS: Compliant	0	2500:$0.3700 5000:$0.3600 7500:$0.3300
SI4800BDY-T1-E3/BKN DISTI # 70026360	Vishay Siliconix	N-Channel REDUCED QG,Fast Switching MOSFET RoHS: Compliant	0	1:$0.6800 100:$0.6500 250:$0.6100 500:$0.5800 1000:$0.5500
SI4800BDY-T1-E3 DISTI # 781-SI4800BDY-E3	Vishay Intertechnologies	MOSFET 30V 9A 2.5W RoHS: Compliant	2984	1:$0.8800 10:$0.7210 100:$0.5530 500:$0.4760 1000:$0.3750 2500:$0.3500
SI4800BDY-T1-E3	Vishay Siliconix	6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	2089	953:$0.1875 201:$0.2100 1:$0.6000
SI4800BDY-T1-E3	Vishay Siliconix	6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	20	9:$0.4500 1:$0.6000
SI4800BDY-T1-E3	Vishay Intertechnologies		2568
SI4800BDY-T1-E3	Vishay Intertechnologies		1732
SI4800BDY-T1-E3TR-ND	Vishay Intertechnologies		1732
SI4800BDY-T1-E3	Vishay Siliconix		18937
SI4800BDY-T1-E3 DISTI # SI4800BDY-E3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,30V,7A,2.5W,SO8	3509	5:$0.3300 25:$0.3100 100:$0.2700 500:$0.2300 2500:$0.2000
SI4800BDYT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 1575
SI4800BDY-T1-E3	Vishay Intertechnologies	INSTOCK	7500
SI4800BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V 9A 2.5W	Americas - 2500
SI4800BDY-T1-E3 DISTI # C1S806000590040	Vishay Intertechnologies	MOSFETs RoHS: Compliant	390	250:$0.4148 100:$0.4795 25:$0.5911 10:$0.5934

영상	부분 #	설명
	Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3	MOSFET 30V 9A 2.5W
	Mfr.#: SI4800BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4800BDY-T1-E3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI4800BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI4800BDY-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI4800B OMO.#: OMO-SI4800B-1190	신규 및 오리지널
	Mfr.#: SI4800BCY-T1-E3 OMO.#: OMO-SI4800BCY-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI4800BDY-T OMO.#: OMO-SI4800BDY-T-1190	신규 및 오리지널
	Mfr.#: SI4800BDY-T1 OMO.#: OMO-SI4800BDY-T1-1190	신규 및 오리지널
	Mfr.#: SI4800BDY-T1-E OMO.#: OMO-SI4800BDY-T1-E-1190	신규 및 오리지널
	Mfr.#: SI4800BDY-T1-E3 SOP8 OMO.#: OMO-SI4800BDY-T1-E3-SOP8-1190	신규 및 오리지널
	Mfr.#: SI4800BDY-T1-E3. OMO.#: OMO-SI4800BDY-T1-E3--1190	Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di

SI4800BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes