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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI4800BDY-T1-GE3 DISTI # V72:2272_09216570 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 1231 |
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| SI4800BDY-T1-GE3 DISTI # V36:1790_09216570 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4687In Stock |
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| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4687In Stock |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4800BDY-T1-GE3 DISTI # 25790146 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant | 1231 |
|
| SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4800BDY-T1-GE3 DISTI # 16P3753 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4800BDY-T1-GE3. DISTI # 16AC0256 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,Power Dissipation Pd:1.3W,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
| SI4800BDY-T1-GE3 DISTI # 781-SI4800BDY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant | 170 |
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| SI4800BDY-T1-GE3 | Vishay Intertechnologies | 3089 | ||
| SI4800BDYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | 2500 |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3 |
MOSFET 30V 9A 2.5W |
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Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3 |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
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Mfr.#: SI4800BDY-T1-E3-CUT TAPE |
신규 및 오리지널 |
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Mfr.#: SI4800BDY-T1-GE3-CUT TAPE |
신규 및 오리지널 |
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Mfr.#: SI4800BDY-T1 OMO.#: OMO-SI4800BDY-T1-1190 |
신규 및 오리지널 |
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Mfr.#: SI4800BDY-T1-E OMO.#: OMO-SI4800BDY-T1-E-1190 |
신규 및 오리지널 |
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Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |
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Mfr.#: SI4800BDY-T1-E3 SOP8 |
신규 및 오리지널 |
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Mfr.#: SI4800BDY-T1-E3. OMO.#: OMO-SI4800BDY-T1-E3--1190 |
Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di |
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Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY |
MOSFET N-CH 30V 6.5A 8-SOIC |