SI4800BDY-T1-E3.

SI4800BDY-T1-E3.
Mfr. #:
SI4800BDY-T1-E3.
제조사:
Vishay Intertechnologies
설명:
Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4800BDY-T1-E3. 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
Tags
SI4800BDY-T1-E3, SI4800BDY-T1-E, SI4800BDY-T1, SI4800BDY-T, SI4800BDY, SI4800BD, SI4800B, SI4800, SI480, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
부분 # 제조 설명 재고 가격
SI4800BDY-T1-E3
DISTI # V72:2272_09216568
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 1000:$0.3325
  • 500:$0.4147
  • 250:$0.5131
  • 100:$0.5188
  • 25:$0.6128
  • 10:$0.7488
  • 1:$0.8500
SI4800BDY-T1-E3
DISTI # V36:1790_09216568
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 5000:$0.3096
  • 2500:$0.3321
SI4800BDY-T1-E3
DISTI # 32906483
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 21:$0.8500
SI4800BDY-T1-E3
DISTI # 32881136
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 2500:$0.3321
SI4800BDY-T1-E3
DISTI # 32864377
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 2500:$0.4078
SI4800BDY-T1-E3
DISTI # 32395919
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
651
  • 180:$0.4277
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 5000
  • 25000:$0.2699
  • 15000:$0.2779
  • 10000:$0.2859
  • 5000:$0.2979
  • 2500:$0.3069
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4800BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Cut Tape
Americas - 0
  • 1:$0.4546
SI4800BDY-T1-E3
DISTI # SI4800BDY-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4800BDY-T1-E3
    DISTI # SI4800BDY-T1-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.2019
    • 15000:€0.2169
    • 10000:€0.2349
    • 5000:€0.2729
    • 2500:€0.3999
    SI4800BDY-T1-E3
    DISTI # 06J7845
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7845)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 500:$0.4760
    • 250:$0.5150
    • 100:$0.5530
    • 50:$0.6090
    • 25:$0.6650
    • 10:$0.7210
    • 1:$0.8800
    SI4800BDY-T1-E3.
    DISTI # 28AC2144
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:6.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:1.3W,No. of Pins:8Pins RoHS Compliant: No2500
    • 25000:$0.2780
    • 15000:$0.2860
    • 10000:$0.2940
    • 5000:$0.3070
    • 1:$0.3160
    SI4800BDY-T1-E3
    DISTI # 06J7845
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0185ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Product Range:- RoHS Compliant: Yes651
    • 1:$0.2780
    • 10:$0.2780
    • 25:$0.2780
    • 50:$0.2780
    • 100:$0.2780
    • 250:$0.2780
    • 500:$0.2780
    SI4800BDY-T1-E3
    DISTI # 70026225
    Vishay SiliconixSI4800BDY-T1-E3 N-channel MOSFET Transistor,6.5 A,30 V,8-Pin SOIC
    RoHS: Compliant
    0
    • 2500:$0.3990
    • 5000:$0.3880
    • 7500:$0.3560
    SI4800BDY-T1-E3/BKN
    DISTI # 70026360
    Vishay SiliconixN-Channel REDUCED QG,Fast Switching MOSFET
    RoHS: Compliant
    0
    • 1:$0.6800
    • 100:$0.6500
    • 250:$0.6100
    • 500:$0.5800
    • 1000:$0.5500
    SI4800BDY-T1-E3Vishay IntertechnologiesSingle N-Channel 30 V 18.5 mOhms Surface Mount Power Mosfet - SOIC-8
    RoHS: Compliant
    5000Reel
    • 2500:$0.2900
    SI4800BDY-T1-E3Vishay Siliconix 18937
      SI4800BDY-T1-E3Vishay Intertechnologies 11853
        SI4800BDY-T1-E3Vishay Intertechnologies 1732
          SI4800BDY-T1-E3Vishay Intertechnologies 13428
            SI4800BDYT1-E3Vishay Intertechnologies 1495
              SI4800BDY-T1-E3Vishay Siliconix6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET2151
              • 953:$0.1875
              • 201:$0.2100
              • 1:$0.6000
              SI4800BDY-T1-E3Vishay Siliconix6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET20
              • 9:$0.4500
              • 1:$0.6000
              SI4800BDY-T1-E3Vishay Semiconductors6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET19545
              • 5715:$0.2250
              • 2668:$0.2625
              • 1:$0.7500
              SI4800BDY-T1-E3Vishay Intertechnologies6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET1385
              • 534:$0.3000
              • 134:$0.3750
              • 1:$0.7500
              SI4800BDY-T1-E3
              DISTI # SI4800BDY-E3
              Vishay IntertechnologiesTransistor: N-MOSFET,unipolar,30V,7A,2.5W,SO81738
              • 2500:$0.2000
              • 500:$0.2300
              • 100:$0.2700
              • 25:$0.3000
              • 5:$0.3300
              SI4800BDYT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
              RoHS: Compliant
              1575
                SI4800BDY-T1-E3
                DISTI # XSFP00000090671
                Vishay Siliconix 
                RoHS: Compliant
                5000 in Stock0 on Order
                • 5000:$0.3867
                • 2500:$0.4143
                영상 부분 # 설명
                SI4800BDY-T1-E3

                Mfr.#: SI4800BDY-T1-E3

                OMO.#: OMO-SI4800BDY-T1-E3

                MOSFET 30V 9A 2.5W
                SI4800BDY-T1-E3-CUT TAPE

                Mfr.#: SI4800BDY-T1-E3-CUT TAPE

                OMO.#: OMO-SI4800BDY-T1-E3-CUT-TAPE-1190

                신규 및 오리지널
                SI4800BDY-T1-GE3-CUT TAPE

                Mfr.#: SI4800BDY-T1-GE3-CUT TAPE

                OMO.#: OMO-SI4800BDY-T1-GE3-CUT-TAPE-1190

                신규 및 오리지널
                SI4800BD

                Mfr.#: SI4800BD

                OMO.#: OMO-SI4800BD-1190

                신규 및 오리지널
                SI4800BDY

                Mfr.#: SI4800BDY

                OMO.#: OMO-SI4800BDY-1190

                MOSFET 30V 9A 2.5W
                SI4800BDY-T

                Mfr.#: SI4800BDY-T

                OMO.#: OMO-SI4800BDY-T-1190

                신규 및 오리지널
                SI4800BDY-T1-E3

                Mfr.#: SI4800BDY-T1-E3

                OMO.#: OMO-SI4800BDY-T1-E3-VISHAY

                MOSFET N-CH 30V 6.5A 8-SOIC
                SI4800BDY-T1-E3.

                Mfr.#: SI4800BDY-T1-E3.

                OMO.#: OMO-SI4800BDY-T1-E3--1190

                Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di
                SI4800BDY-T1-GE3

                Mfr.#: SI4800BDY-T1-GE3

                OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY

                MOSFET N-CH 30V 6.5A 8-SOIC
                SI4800BDY-TI-E3

                Mfr.#: SI4800BDY-TI-E3

                OMO.#: OMO-SI4800BDY-TI-E3-1190

                신규 및 오리지널
                유효성
                재고:
                Available
                주문 시:
                3000
                수량 입력:
                SI4800BDY-T1-E3.의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
                참고 가격(USD)
                수량
                단가
                내선 가격
                1
                US$0.00
                US$0.00
                10
                US$0.00
                US$0.00
                100
                US$0.00
                US$0.00
                500
                US$0.00
                US$0.00
                1000
                US$0.00
                US$0.00
                2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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