TGF2160

Mfr. #:: TGF2160
제조사:: Qorvo
설명:: RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2160 데이터 시트
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ECAD Model:
추가 정보:: TGF2160 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: pHEMT

기술:: GaAs

얻다:: 10.4 dB

Vds - 드레인 소스 항복 전압:: 12 V

Vgs - 게이트 소스 항복 전압:: - 7 V

Id - 연속 드레인 전류:: 517 mA

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 5.6 W

장착 스타일:: SMD/SMT

포장:: 젤팩

구성:: 듀얼

동작 주파수:: 20 GHz

작동 온도 범위:: - 65 C to + 150 C

제품:: RF JFET

유형:: GaAs pHEMT

상표:: 코르보

순방향 트랜스컨덕턴스 - 최소:: 619 mS

채널 수:: 2 Channel

P1dB - 압축점:: 32.5 dBm

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1098617

Tags: TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2160 설명

***W: Transistor, DC- 20 GHz, 32.5 dBm, 10.4 dB, 8V, DIE

TGF2160 추가 정보

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

TGF2160 1600µm Discrete GaAs pHEMT: Qorvo TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the Qorvo 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. Qorvo TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Market price

부분 #	제조	설명	재고	가격
TGF2160 DISTI # 772-TGF2160	Qorvo	RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE RoHS: Compliant	0	100:$17.2700 300:$16.1400 500:$15.0900

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