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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB034N03LGATMA1 DISTI # V72:2272_06384520 | Infineon Technologies AG | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB034N03LGATMA1 DISTI # V36:1790_06384520 | Infineon Technologies AG | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 157In Stock |
|
| IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 157In Stock |
|
| IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB034N03LGATMA1 DISTI # 31056862 | Infineon Technologies AG | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB034N03LGATMA1 DISTI # 31053479 | Infineon Technologies AG | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB034N03LGXT DISTI # IPB034N03LGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 1000 |
|
| IPB034N03LGATMA1 DISTI # SP000304126 | Infineon Technologies AG | Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: SP000304126) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB034N03LGATMA1 DISTI # 60R2650 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 80A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 |
|
| IPB034N03L G DISTI # 726-IPB034N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1790 |
|
| IPB034N03LGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 3000 |
|
| IPB034N03LGATMA1 DISTI # 7545424 | Infineon Technologies AG | MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, PK | 110 |
|
| IPB034N03LGATMA1 DISTI # 7545424P | Infineon Technologies AG | MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, RL | 1860 |
|
| IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,80A,94W,PG-TO263-3 | 954 |
|
| IPB034N03LGATMA1 DISTI # 1775527 | Infineon Technologies AG | MOSFET, N CH, 80A, 30V, PG-TO263-3 RoHS: Compliant | 1751 |
|
| IPB034N03LGATMA1 DISTI # 1775527 | Infineon Technologies AG | MOSFET, N CH, 80A, 30V, PG-TO263-3 | 1751 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPB032N10N5ATMA1 OMO.#: OMO-IPB032N10N5ATMA1 |
MOSFET DIFFERENTIATED MOSFETS |
|
Mfr.#: IPB03N03LA G |
MOSFET N-CH 25V 80A TO-263 |
|
|
Mfr.#: IPB03N03LB |
MOSFET N-CH 30V 80A D2PAK |
|
Mfr.#: IPB036N12N3-G OMO.#: OMO-IPB036N12N3-G-1190 |
INSTOCK |
|
|
Mfr.#: IPB034N03LG OMO.#: OMO-IPB034N03LG-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPB039N10N3GE8197ATMA1 |
신규 및 오리지널 |
|
|
Mfr.#: IPB03N03LBG OMO.#: OMO-IPB03N03LBG-1190 |
MOSFET N-Ch 30V 80A D2PAK-2 |
|
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Mfr.#: IPB037N06N3 G OMO.#: OMO-IPB037N06N3-G-124 |
Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 |
|
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Mfr.#: IPB034N06L3 G OMO.#: OMO-IPB034N06L3-G-124 |
Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 |
|
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Mfr.#: IPB039N10N3GE818XT OMO.#: OMO-IPB039N10N3GE818XT-317 |
RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 |