IRF6785MTRPBF

IRF6785MTRPBF
Mfr. #:
IRF6785MTRPBF
제조사:
Infineon / IR
설명:
MOSFET 200V 1 x N-CH HEXFET for Digital Audio
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF6785MTRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
DirectFET-MZ
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
200 V
Id - 연속 드레인 전류:
19 A
Rds On - 드레인 소스 저항:
85 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
26 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
57 W
구성:
하나의
채널 모드:
상승
상표명:
다이렉트펫
포장:
키:
0.7 mm
길이:
6.35 mm
트랜지스터 유형:
1 N-Channel
너비:
5.05 mm
상표:
인피니언 / IR
가을 시간:
14 ns
상품 유형:
MOSFET
상승 시간:
8.6 ns
공장 팩 수량:
4800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
7.2 ns
일반적인 켜기 지연 시간:
6.2 ns
부품 번호 별칭:
SP001562032
Tags
IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 100 mOhm 36 nC SMT HEXFET® Power Mosfet - DIRECTFET™ MZ
***ineon
Target Applications: Battery Operated Drive; Class D Audio; Load Switch High Side
***ark
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***ernational Rectifier
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
***(Formerly Allied Electronics)
IRFS4620PBF N-channel MOSFET Transistor, 24 A, 200 V, 3-Pin D2PAK | Infineon IRFS4620PBF
***ure Electronics
Single N-Channel 200 V 77.5 mOhm 25 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK Tube
***icontronic
Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH 200V 24A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0637ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power D
***ure Electronics
Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
*** Source Electronics
MOSFET N-CH 200V 24A DPAK / Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) DPAK T/R
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 200V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ernational Rectifier
Digital Audio 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***et
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
AUDIO MOSFET, 200V, 24A, 78 MOHM, 25 NC QG, D2PAK
***ark
N CH DIG AUDIO MOSFET, HEXFET, 200V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W ;RoHS Compliant: Yes
***emi
N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
***ure Electronics
FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3.7A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):64mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V
***rchild Semiconductor
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
***nell
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.7A; Resistance, Rds On:0.077ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS2672; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V
***ure Electronics
Single N-Channel 200 V 0.09 Ohms Surface Mount Power Mosfet - TO-252
***roFlash
Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:200V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:19A; Package / Case:DPAK; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
부분 # 제조 설명 재고 가격
IRF6785MTRPBF
DISTI # V72:2272_13890116
Infineon Technologies AGTrans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R
RoHS: Compliant
4800
  • 3000:$1.1646
  • 1000:$1.1772
  • 500:$1.4165
  • 250:$1.6050
  • 100:$1.6667
  • 25:$1.8197
  • 10:$2.0219
  • 1:$2.3544
IRF6785MTRPBF
DISTI # IRF6785MTRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 3.4A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4536In Stock
  • 1000:$1.4457
  • 500:$1.7448
  • 100:$2.2433
  • 10:$2.7920
  • 1:$3.0900
IRF6785MTRPBF
DISTI # IRF6785MTRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 200V 3.4A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4536In Stock
  • 1000:$1.4457
  • 500:$1.7448
  • 100:$2.2433
  • 10:$2.7920
  • 1:$3.0900
IRF6785MTRPBF
DISTI # IRF6785MTRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 200V 3.4A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4800:$1.2584
IRF6785MTRPBF
DISTI # 30702329
Infineon Technologies AGTrans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R
RoHS: Compliant
4800
  • 4800:$1.1040
IRF6785MTRPBF
DISTI # 31262058
Infineon Technologies AGTrans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R
RoHS: Compliant
4800
  • 3000:$1.1646
  • 1000:$1.1772
  • 500:$1.4165
  • 250:$1.6050
  • 100:$1.6667
  • 25:$1.8197
  • 10:$2.0219
  • 6:$2.3544
IRF6785MTRPBF
DISTI # SP001562032
Infineon Technologies AGTrans MOSFET N-CH 200V 3.4A 7-Pin Direct-FET MZ T/R (Alt: SP001562032)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel
Europe - 0
  • 4800:€1.4399
  • 9600:€1.1999
  • 19200:€1.1069
  • 28800:€1.0279
  • 48000:€0.9599
IRF6785MTRPBF
DISTI # 49AC0326
Infineon Technologies AGMOSFET, N-CH, 200V, 19A, DIRECTFET MZ,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes4798
  • 1:$2.5900
  • 10:$2.2000
  • 25:$2.0500
  • 50:$1.9100
  • 100:$1.7600
  • 250:$1.6600
  • 500:$1.5500
  • 1000:$1.2800
IRF6785MTRPBF
DISTI # 70019617
Infineon Technologies AGMOSFET,200V,15A,100 MOHM,26 NC QG,MED CAN
RoHS: Compliant
0
  • 4800:$1.2500
  • 9600:$1.2250
  • 24000:$1.1880
IRF6785MTRPBF
DISTI # 942-IRF6785MTRPBF
Infineon Technologies AGMOSFET 200V 1 x N-CH HEXFET for Digital Audio
RoHS: Compliant
5312
  • 1:$2.5900
  • 10:$2.2000
  • 100:$1.7600
  • 500:$1.5500
  • 1000:$1.2800
  • 2500:$1.1900
  • 4800:$1.1500
IRF6785MTRPBF
DISTI # 2839482
Infineon Technologies AGMOSFET, N-CH, 200V, 19A, DIRECTFET MZ
RoHS: Compliant
4798
  • 1:$2.6700
  • 10:$2.4900
  • 100:$2.2100
  • 250:$2.0900
  • 500:$1.9800
  • 1000:$1.8800
IRF6785MTRPBF
DISTI # 2839482
Infineon Technologies AGMOSFET, N-CH, 200V, 19A, DIRECTFET MZ
RoHS: Compliant
4798
  • 500:£1.1700
  • 250:£1.2600
  • 100:£1.3400
  • 10:£1.6600
  • 1:£2.2100
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OMO.#: OMO-F280049PMS

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Mfr.#: ADP1071-2ARWZ

OMO.#: OMO-ADP1071-2ARWZ

Switching Controllers Isolated Flyback controller w/SR
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OMO.#: OMO-AD8616ARZ-ANALOG-DEVICES-INC-ADI

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F280049PMS

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OMO.#: OMO-F280049PMS-TEXAS-INSTRUMENTS

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유효성
재고:
Available
주문 시:
1990
수량 입력:
IRF6785MTRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.58
US$2.58
10
US$2.20
US$22.00
100
US$1.76
US$176.00
500
US$1.54
US$770.00
1000
US$1.27
US$1 270.00
2500
US$1.18
US$2 950.00
시작
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