TGF2929-FS

Mfr. #:: TGF2929-FS
제조사:: Qorvo
설명:: RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2929-FS 데이터 시트
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ECAD Model:
추가 정보:: TGF2929-FS 추가 정보

제품 속성
속성 값

제조사: 트라이퀸트(Qorvo)

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

유형: RF 전력 MOSFET

포장: 쟁반

부분 별칭: 1123716

기술: GaN Si

얻다: 14 dB

출력 파워: 107 W

Pd 전력 손실: 144 W

동작 주파수: 3.5 GHz

Vgs 게이트 소스 전압: 145 V

Id-연속-드레인-전류: 12 A

Vds-드레인-소스-고장-전압: 28 V

Vgs-th-Gate-Source-Threshold-Voltage: - 2.9 V

트랜지스터 극성: N-채널

Tags: TGF2929-F, TGF292, TGF29, TGF2, TGF

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2929-FS 추가 정보

TGF2929 GaN RF Power Transistors: Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
TGF2929-FS DISTI # 772-TGF2929-FS	Qorvo	RF MOSFET Transistors DC-3.5GHz 100W 28V GaN RoHS: Compliant	23	1:$351.0000 25:$316.7800
TGF2929-FS/FL, 3.1-3.5GHZ EVB DISTI # 772-TGF2929-FS/FL-EV	Qorvo	RF Development Tools DC-3.5GHz 100W Eval Board RoHS: Compliant	1	1:$875.0000
1123716 DISTI # TGF2929-FS	Qorvo	RF POWER TRANSISTOR RoHS: Compliant	10	1:$90.0000

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