TGF2955

Mfr. #:: TGF2955
제조사:: Qorvo
설명:: RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2955 데이터 시트
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ECAD Model:
추가 정보:: TGF2955 추가 정보

제품 속성
속성 값

제조사: 트라이퀸트(Qorvo)

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 와플

부분 별칭: 1112260

장착 스타일: SMD/SMT

작동 온도 범위: - 65 C to + 150 C

패키지 케이스: 주사위

기술: GaN SiC

구성: 하나의

트랜지스터형: 헴트

얻다: 19.2 dB

출력 파워: 46.4 dBm

Pd 전력 손실: 41 W

최대 작동 온도: + 150 C

최소 작동 온도: - 65

동작 주파수: 15 GHz

Id-연속-드레인-전류: 2.5 A

Vds-드레인-소스-고장-전압: 32 V

트랜지스터 극성: N-채널

최대 드레인 게이트 전압: 100 V

Tags: TGF295, TGF29, TGF2, TGF

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2955 추가 정보

TGF GaN on SiC Transistors: Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
TGF2955 DISTI # 772-TGF2955	Qorvo	RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm RoHS: Compliant	3	1:$75.1500 25:$65.7600 100:$57.5500
1112260 DISTI # TGF2955	Qorvo	RF POWER TRANSISTOR RoHS: Compliant	0	1:$33.0700

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