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FDMS86181

FDMS86181
Mfr. #:
FDMS86181
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 100V/20V N-Chnl Power Trench MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDMS86181 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FDMS86181 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
Power-56-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
124 A
Rds On - 드레인 소스 저항:
12 mOhms
Vgs th - 게이트 소스 임계 전압:
2 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
42 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
125 W
구성:
하나의
채널 모드:
상승
상표명:
파워트렌치
포장:
릴
키:
1.1 mm
길이:
6 mm
제품:
파워 MOSFET
시리즈:
FDMS86181
유형:
파워트렌치
너비:
5 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
116 S
가을 시간:
6 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
25 ns
일반적인 켜기 지연 시간:
17 ns
단위 무게:
0.003175 oz
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86181
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
***ure Electronics
N-Channel 100 V 4.2 mOhm 42 nC SMT Shielded Gate PowerTrench Mosfet - Power56
***et
Trans MOSFET N-CH 100V 44A 8-Pin Power56 T/R
***an P&S
N-CH Shielded Gate PowerTrench MOSFET
***et Europe
NM1 100V/20V NCH POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 100V 44A
***i-Key
MOSFET N-CH 100V POWER56
***ark
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity:n Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:125W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:Trench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V 124A, POWER56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:124A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.1V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:Trench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
부분 # 제조 설명 재고 가격
FDMS86181
DISTI # V36:1790_14140389		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
    FDMS86181
    DISTI # V72:2272_14140389    		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
      FDMS86181
      DISTI # FDMS86181TR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		On Order
      • 6000:$1.3696
      • 3000:$1.3867
      FDMS86181
      DISTI # FDMS86181CT-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181DKR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181      		ON SemiconductorNM1 100V/20V NCH POWER TRENCH MOSFET - Tape and Reel (Alt: FDMS86181)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$1.1900
      • 6000:$1.1900
      • 12000:$1.1900
      • 18000:$1.1900
      • 30000:$1.1900
      FDMS86181
      DISTI # 01AC8567      		ON SemiconductorFET 100V 4.2 MOHM PQFN56 / REEL0
      • 5000:$1.2800
      • 2500:$1.3100
      • 1000:$1.6300
      • 500:$1.8100
      • 100:$1.9600
      • 10:$2.4400
      • 1:$2.8700
      FDMS86181
      DISTI # 512-FDMS86181      		ON SemiconductorMOSFET 100V/20V N-Chnl Power Trench MOSFET
      RoHS: Compliant      		0
      • 1:$2.8700
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4100
      • 3000:$1.3200
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-8
      RoHS: Compliant      		0
      • 1000:$2.3800
      • 500:$2.8200
      • 100:$3.4700
      • 10:$4.2400
      • 1:$4.7400
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-80
      • 500:£1.3100
      • 250:£1.4100
      • 100:£1.5000
      • 10:£1.8800
      • 1:£2.4900
      FDMS86181ON Semiconductor 0
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        유효성
        재고:
        Available
        주문 시:
        5000
        수량 입력:
        FDMS86181의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$2.87
        US$2.87
        10
        US$2.44
        US$24.40
        100
        US$1.95
        US$195.00
        500
        US$1.71
        US$855.00
        1000
        US$1.41
        US$1 410.00
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