QPD1013SR

QPD1013SR
Mfr. #:
QPD1013SR
제조사:
Qorvo
설명:
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
QPD1013SR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
QPD1013SR 추가 정보
제품 속성
속성 값
제조사:
코르보
제품 카테고리:
RF JFET 트랜지스터
RoHS:
Y
트랜지스터 유형:
헴트
기술:
GaN SiC
얻다:
21.8 dB
트랜지스터 극성:
N-채널
Id - 연속 드레인 전류:
1.7 A
출력 파워:
178 W
최대 드레인 게이트 전압:
65 V
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
Pd - 전력 손실:
67 W
장착 스타일:
SMD/SMT
패키지/케이스:
DFN-6
포장:
애플리케이션:
군용 레이더, 방해 전파, 테스트 계측, 광대역 또는 협대역 증폭기, 육상 이동 및 군사
구성:
싱글 트리플 드레인
동작 주파수:
1.2 GHz to 2.7 GHz
상표:
코르보
개발 키트:
QPD1013EVB01
습기에 민감한:
상품 유형:
RF JFET 트랜지스터
공장 팩 수량:
100
하위 카테고리:
트랜지스터
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
GaN RF Transistor 2.7GHz 65V 150W 6-Pin QFN T/R
***el Electronic
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1013 GaN RF Transistor
Qorvo QPD1013 GaN RF Transistor is a high power and wide bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
영상 부분 # 설명
QPD1025L

Mfr.#: QPD1025L

OMO.#: OMO-QPD1025L

RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
QPD1000

Mfr.#: QPD1000

OMO.#: OMO-QPD1000

RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
QPD1003

Mfr.#: QPD1003

OMO.#: OMO-QPD1003

RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
QPD1014SR

Mfr.#: QPD1014SR

OMO.#: OMO-QPD1014SR

RF JFET Transistors .03-1.2GHz 15W 50V GaN
QPD1013SR

Mfr.#: QPD1013SR

OMO.#: OMO-QPD1013SR

RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1019

Mfr.#: QPD1019

OMO.#: OMO-QPD1019

RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
QPD1020SR

Mfr.#: QPD1020SR

OMO.#: OMO-QPD1020SR

RF MOSFET Transistors 2.7-3.5GHz 30W Gain 18.4dB
QPD1008

Mfr.#: QPD1008

OMO.#: OMO-QPD1008-1152

RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
QPD1015L

Mfr.#: QPD1015L

OMO.#: OMO-QPD1015L-1152

RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
QPD1009

Mfr.#: QPD1009

OMO.#: OMO-QPD1009-318

RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
유효성
재고:
Available
주문 시:
1993
수량 입력:
QPD1013SR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$176.00
US$176.00
25
US$152.22
US$3 805.50
시작
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