SIZ904DT-T1-GE3

Mfr. #:: SIZ904DT-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIZ904DT-T1-GE3 데이터 시트
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HTML Datasheet:: SIZ904DT-T1-GE3 Datasheet SIZ904DT-T1-GE3 Datasheet (P4-P6)SIZ904DT-T1-GE3 Datasheet (P7-P9)SIZ904DT-T1-GE3 Datasheet (P10-P12)SIZ904DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
추가 정보:: SIZ904DT-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PowerPAIR-6x5-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 12 A, 16 A

Rds On - 드레인 소스 저항:: 24 mOhms, 13.5 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V, 1.2 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 12 nC, 23 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 20 W, 33 W

구성:: 듀얼

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

시리즈:: 사이즈

트랜지스터 유형:: 2 N-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 17 S, 24 S

가을 시간:: 10 ns

상품 유형:: MOSFET

상승 시간:: 12 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 13 ns

일반적인 켜기 지연 시간:: 15 ns

부품 번호 별칭:: SIZ904DT-GE3

Tags: SIZ904, SIZ90, SIZ9, SiZ

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ904DT-T1-GE3 설명

***(Formerly Allied Electronics): SIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor; 9.5A; 14.5A; 30V; 8-Pin PowerPAIR

***et: Transistor MOSFET Array Dual N-CH 30V 12A/16A 8-Pin PowerPAIR T/R

***ure Electronics: Dual N Channel 30 V 0.024/0.0135 O 3.8/7.3 nC Power Mosfet - PowerPAIR 6 x 5

***ure Electronics: SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8

***ark: Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:15.6W; No. of Pins:8Pins RoHS Compliant: No

***ment14 APAC: MOSFET, N-CH, 30V, 12A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:15.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:15.6W; Voltage Vgs Max:20V

***et: Transistor MOSFET Array Dual N-Channel 30V 9.4A/14A 6-Pin PowerPAIR

***el Electronic: MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V

***i-Key: MOSFET 2N-CH 30V 12A PPAK 1212-8

***S: French Electronic Distributor since 1988

***enic: PowerPAIR-6x3.7-6 MOSFETs ROHS

***ment14 APAC: N CHANNEL MOSFET, 30V, 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V

***Yang: Transistor MOSFET Array Dual N-CH 30V 23A/45A 8-Pin Power 33 T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench® MOSFET 30V, 9.5mΩ and 20mΩ

*** Source Electronics: MOSFET 2N-CH 30V 8A/12A POWER33 / Trans MOSFET N-CH Si 30V 18A 8-Pin WDFN EP T/R

***ment14 APAC: MOSFET,NN CH,30V,18A,POWER33; Module Configuration:Dual; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.2W

***rchild Semiconductor: This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

***Yang: Transistor MOSFET Array Dual N-CH 30V 23A/46A 8-Pin Power 33 T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench® MOSFET 30V, 10mΩ, 20mΩ

***ark: DUAL N CH MOSFET, POWERTRENCH, 30V, 18A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0078ohm

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

***nell: MOSFET, NN CH, 30V, 18A/13A, POWER33; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ical: Trans MOSFET N-CH 30V 15A 8-Pin QFN EP T/R

***peria: PSMN017-30LL - N-channel DFN3333-8 30 V 17 mΩ logic level MOSFET

***ark: MOSFET, N CH, 30V, 15A, 8-QFN3333

***el Electronic: IC PREDRIVER QUAD LOSIDE 32-LQFP

***ure Electronics: N-Channel 30 V 0.02 Ohm Power MOSFET SMT - TO-252-3

***et: Trans MOSFET N-CH 30V 18.4A 3-Pin(2+Tab) DPAK T/R

***el Electronic: ANALOG DEVICES ADM707ANZ. IC, MPU SUPERVISOR, 4.65VTH, 8DIP

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ronik: N-CH 30V 18A 20mOhm TO252-3 RoHSconf

SIZ904DT-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

부분 #	제조	설명	재고	가격
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5205
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIZ904DT-T1-GE3 DISTI # 70616574	Vishay Siliconix	SIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR RoHS: Compliant	0	300:$0.6600 600:$0.6500 1500:$0.6400 3000:$0.6200
SIZ904DT-T1-GE3 DISTI # 78-SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 RoHS: Compliant	0	1:$1.1900 10:$0.9740 100:$0.7470 500:$0.6430 1000:$0.6080 3000:$0.5640
SIZ904DTT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5	Americas -

영상	부분 #	설명
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
	Mfr.#: SIZ904DT OMO.#: OMO-SIZ904DT-1190	신규 및 오리지널
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY	MOSFET 2N-CH 30V 12A POWERPAIR
	Mfr.#: SIZ904DTT1GE3 OMO.#: OMO-SIZ904DTT1GE3-1190	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SIZ904DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes