PartNumber | SIZ904DT-T1-GE3 | SIZ904DT | SIZ904DTT1GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PowerPAIR-6x5-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 12 A, 16 A | - | - |
Rds On Drain Source Resistance | 24 mOhms, 13.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V, 1.2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 12 nC, 23 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 20 W, 33 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SIZ | - | - |
Transistor Type | 2 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 17 S, 24 S | - | - |
Fall Time | 10 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Part # Aliases | SIZ904DT-GE3 | - | - |