SIZ904DT-T1-GE3

Mfr. #:: SIZ904DT-T1-GE3
제조사:: Vishay
설명:: MOSFET 2N-CH 30V 12A POWERPAIR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIZ904DT-T1-GE3 데이터 시트
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ECAD Model:
추가 정보:: SIZ904DT-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIZ904DT-GE3

장착 스타일: SMD/SMT

패키지 케이스: 6-PowerPair

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 6-PowerPair

구성: 듀얼

FET형: 2 N-Channel (Half Bridge)

파워맥스: 20W, 33W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 435pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 12A, 16A

Rds-On-Max-Id-Vgs: 24 mOhm @ 7.8A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 12nC @ 10V

Pd 전력 손실: 33 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns 8 ns

상승 시간: 10 ns 9 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 16 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 24 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 15 nS 14 nS

Qg-Gate-Charge: 3.8 nC 7.3 nC

Tags: SIZ904, SIZ90, SIZ9, SiZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ904DT-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

부분 #	제조	설명	재고	가격
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 12A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5205
SIZ904DT-T1-GE3 DISTI # SIZ904DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIZ904DT-T1-GE3 DISTI # 70616574	Vishay Siliconix	SIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR RoHS: Compliant	0	300:$0.6600 600:$0.6500 1500:$0.6400 3000:$0.6200
SIZ904DT-T1-GE3 DISTI # 78-SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 RoHS: Compliant	0	1:$1.1900 10:$0.9740 100:$0.7470 500:$0.6430 1000:$0.6080 3000:$0.5640
SIZ904DTT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIZ904DT-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5	Americas -

영상	부분 #	설명
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
	Mfr.#: SIZ904DT OMO.#: OMO-SIZ904DT-1190	신규 및 오리지널
	Mfr.#: SIZ904DT-T1-GE3 OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY	MOSFET 2N-CH 30V 12A POWERPAIR
	Mfr.#: SIZ904DTT1GE3 OMO.#: OMO-SIZ904DTT1GE3-1190	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SIZ904DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes