RGT60TS65DGC11

Mfr. #:: RGT60TS65DGC11
제조사:: ROHM Semiconductor
설명:: IGBT Transistors 650V 30A IGBT Stop Trench
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: RGT60TS65DGC11 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: RGT60TS65DGC11 추가 정보

제품 속성
속성 값

제조사:: 로옴 반도체

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.65 V

최대 게이트 이미터 전압:: 30 V

25C에서 연속 수집기 전류:: 55 A

Pd - 전력 손실:: 194 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

시리즈:: RGT60TS65D

포장:: 튜브

연속 수집가 현재 IC 최대:: 55 A

작동 온도 범위:: - 40 C to + 175 C

상표:: 로옴 반도체

지속적인 수집가 전류:: 30 A

게이트-이미터 누설 전류:: +/- 200 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 450

하위 카테고리:: IGBT

부품 번호 별칭:: RGT60TS65D

단위 무게:: 1.340411 oz

Tags: RGT60TS65DG, RGT60T, RGT6, RGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RGT60TS65DGC11 설명

***ical: Trans IGBT Chip N-CH 650V 55A 194000mW 3-Pin(3+Tab) TO-247N Bulk

***nell: IGBT, SINGLE, 650V, 55A, TO-247N-3

***ark: Igbt, Single, 650V, 55A, To-247N-3; Dc Collector Current:55A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:194W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes

RGT60TS65DGC11 추가 정보

Field Stop Trench IGBTs: ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.

Market price

부분 #	제조	설명	재고	가격
RGT60TS65DGC11 DISTI # RGT60TS65DGC11-ND	ROHM Semiconductor	IGBT 650V 55A 194W TO-247N RoHS: Compliant Min Qty: 1 Container: Tube	260In Stock	2500:$1.5750 1000:$1.6538 500:$1.9609 250:$2.1853 100:$2.4216 25:$2.6580 10:$2.9530 1:$3.3100
RGT60TS65DGC11 DISTI # RGT60TS65DGC11	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 55A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGT60TS65DGC11) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.6900 900:$1.5900 1800:$1.4900 2700:$1.3900 4500:$1.3900
RGT60TS65DGC11 DISTI # 755-RGT60TS65DGC11	ROHM Semiconductor	IGBT Transistors 650V 30A IGBT Stop Trench RoHS: Compliant	306	1:$2.9800 10:$2.5400 100:$2.2000 250:$2.0900 500:$1.8700 1000:$1.5800 2500:$1.5000 5000:$1.4400
RGT60TS65DGC11	ROHM Semiconductor	* FREE SHIPPING ORDERS OVER $100 *	24	18:$3.9000 6:$4.2900 1:$5.8500
RGT60TS65DGC11 DISTI # IGBT2242	ROHM Semiconductor	IGBT650V30A1,65VTO-247 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	450:$2.8800 900:$2.7100 1350:$2.6200 1800:$2.4200
RGT60TS65DGC11	ROHM Semiconductor	RoHS(ship within 1day)	30	1:$3.7100 10:$3.0500 50:$2.4500 100:$2.0900 500:$1.9900 1000:$1.9500
RGT60TS65DGC11	ROHM Semiconductor	IGBT Transistors 650V 30A IGBT Stop Trench RoHS: Compliant	Americas -
RGT60TS65DGC11 DISTI # 2519783	ROHM Semiconductor	IGBT, SINGLE, 650V, 55A, TO-247N-3 RoHS: Compliant	0	500:£1.5800 250:£1.6000 100:£1.6800 10:£1.9400 1:£2.5600

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