S25FL128SAGMFB001

Mfr. #:: S25FL128SAGMFB001
제조사:: Cypress Semiconductor
설명:: Flash Memory 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TUBE PACKING)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: S25FL128SAGMFB001 데이터 시트
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추가 정보:: S25FL128SAGMFB001 추가 정보 S25FL128SAGMFB001 Product Details

제품 속성
속성 값

제조사: 싸이프레스 반도체

제품 카테고리: 메모리

시리즈: FL-S

포장: 튜브 대체 포장

장착 스타일: SMD/SMT

작동 온도 범위: - 40 C to + 105 C

패키지 케이스: SO-16

작동 온도: -40°C ~ 105°C (TA)

상호 작용: SPI 시리얼

전압 공급: 2.7 V ~ 3.6 V

공급자-장치-패키지: 16-SO

메모리 크기: 128M (16M x 8)

메모리형: 플래시 - NOR

속도: 133MHz

건축학: 미러비트 이클립스

포맷 메모리: 플래시

기준: 공통 플래시 인터페이스(CFI)

인터페이스 유형: SPI

조직: 16 M x 8

공급 전류 최대: 100 mA

데이터 버스 너비: 8 bit

공급 전압 최대: 3.6 V

공급 전압 최소: 2.7 V

최대 클록 주파수: 133 MHz

타이밍 유형: 동기

Tags: S25FL128SAGMFB00, S25FL128SAGMFB0, S25FL128SAGMFB, S25FL128SAGM, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL128SAGMFB001 추가 정보

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

부분 #	제조	설명	재고	가격
S25FL128SAGMFB001 DISTI # S25FL128SAGMFB001-ND	Cypress Semiconductor	IC FLASH 128M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 141 Container: Tube	Temporarily Out of Stock	141:$3.2924
S25FL128SAGMFB001 DISTI # 727-S25FL128SAGMFB00	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$5.4500 10:$4.8800 25:$4.3900 100:$4.0000 250:$3.6100 500:$2.9200

관련 상품

영상	부분 #	설명
	Mfr.#: S25FL128LAGMFA010 OMO.#: OMO-S25FL128LAGMFA010	NOR Flash IC 128 Mb FLASH MEMORY
	Mfr.#: S25FL128SAGMFIR13 OMO.#: OMO-S25FL128SAGMFIR13	NOR Flash Nor
	Mfr.#: S25FL128LDPMFB003 OMO.#: OMO-S25FL128LDPMFB003	NOR Flash IC 128 Mb FLASHMEM
	Mfr.#: S25FL128SDPBHI210 OMO.#: OMO-S25FL128SDPBHI210	NOR Flash NOR
	Mfr.#: S25FL128P0XMFI003M OMO.#: OMO-S25FL128P0XMFI003M	NOR Flash Nor
	Mfr.#: S25FL128SAGBHBB00 OMO.#: OMO-S25FL128SAGBHBB00-CYPRESS-SEMICONDUCTOR	IC NOR Automotive, AEC-Q100, FL-S
	Mfr.#: S25FL128SAGBHM200 OMO.#: OMO-S25FL128SAGBHM200-CYPRESS-SEMICONDUCTOR	IC 128 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
	Mfr.#: S25FL128SDSBHA213 OMO.#: OMO-S25FL128SDSBHA213-CYPRESS-SEMICONDUCTOR	IC 128 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
	Mfr.#: S25FL128POXMFI003 OMO.#: OMO-S25FL128POXMFI003-1190	신규 및 오리지널
	Mfr.#: S25FL128SAIF01 OMO.#: OMO-S25FL128SAIF01-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 5000
수량 입력:

S25FL128SAGMFB001의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$4.38~~; ~~US$4.38~~

10: ~~US$4.16~~; ~~US$41.61~~

100: ~~US$3.94~~; ~~US$394.20~~

500: ~~US$3.72~~; ~~US$1 861.50~~

1000: ~~US$3.50~~; ~~US$3 504.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

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S25FL128SAGMFB001

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes