SIHB12N50C-E3

SIHB12N50C-E3
Mfr. #:
SIHB12N50C-E3
제조사:
Vishay
설명:
IGBT Transistors MOSFET N-Channel 500V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHB12N50C-E3 데이터 시트
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추가 정보:
SIHB12N50C-E3 추가 정보
제품 속성
속성 값
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIHB12N50C-E3 N-channel MOSFET Transistor; 12 A; 500 V; 3-Pin D2PAK
***et
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
*** Europe
N-CH SINGLE 500V TO263
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
부분 # 제조 설명 재고 가격
SIHB12N50C-E3
DISTI # SIHB12N50C-E3-ND
Vishay SiliconixMOSFET N-CH 500V 12A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$2.9106
SIHB12N50C-E3
DISTI # SIHB12N50C-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHB12N50C-E3
DISTI # 70616559
Vishay SiliconixSIHB12N50C-E3 N-channel MOSFET Transistor,12 A,500 V,3-Pin D2PAK
RoHS: Compliant
0
  • 100:$3.2400
  • 250:$2.7400
  • 500:$2.5400
  • 1000:$2.3700
SIHB12N50C-E3
DISTI # 781-SIHB12N50C-E3
Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant
1000
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2000:$2.5200
SIHB12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant
Americas -
    영상 부분 # 설명
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3

    MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3

    MOSFET N-Channel 600V
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3

    MOSFET N-Channel 500V
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3-VISHAY

    Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3-VISHAY

    IGBT Transistors MOSFET N-Channel 500V
    SIHB12N60E

    Mfr.#: SIHB12N60E

    OMO.#: OMO-SIHB12N60E-1190

    신규 및 오리지널
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB12N65E

    Mfr.#: SIHB12N65E

    OMO.#: OMO-SIHB12N65E-1190

    신규 및 오리지널
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3-VISHAY

    MOSFET N-CHAN 650V D2PAK (TO-263
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    SIHB12N50C-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.88
    US$2.88
    10
    US$2.74
    US$27.37
    100
    US$2.59
    US$259.26
    500
    US$2.45
    US$1 224.30
    1000
    US$2.30
    US$2 304.50
    시작
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