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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIHB12N60E-GE3 DISTI # V36:1790_09219014 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | 0 |
|
| SIHB12N60E-GE3 DISTI # V99:2348_09219014 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK | 0 | |
| SIHB12N60E-GE3 DISTI # SIHB12N60E-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 12A TO263 RoHS: Compliant Min Qty: 1 Container: Bulk | 146In Stock |
|
| SIHB12N60E-GE3 DISTI # SIHB12N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK (Alt: SIHB12N60E-GE3) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| SIHB12N60E-GE3 DISTI # SIHB12N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| SIHB12N60E-GE3 DISTI # 68W7031 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7031) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
|
| SIHB12N60E-GE3 DISTI # 68W7031 | Vishay Intertechnologies | MOSFET, N CHANNEL, 600V, 12A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes | 322 |
|
| SIHB12N60E-GE3 DISTI # 68W7032 | Vishay Intertechnologies | MOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes | 0 |
|
| SIHB12N60E-GE3 DISTI # 78-SIHB12N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 500 |
|
| SIHB12N60E-GE3 DISTI # 7689300P | Vishay Intertechnologies | MOSFET N-CHANNEL 600V 12A D2PAK, TU | 676 |
|
| SIHB12N60EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 900 | |
| SIHB12N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | Americas - | |
| SIHB12N60E-GE3 DISTI # 2364071 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 12A, TO-263 RoHS: Compliant | 1160 |
|
| SIHB12N60E-GE3 DISTI # 2364071 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 12A, TO-263 | 1165 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SIHB120N60E-GE3 OMO.#: OMO-SIHB120N60E-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3 |
MOSFET 650V Vds 30V Vgs D2PAK (TO-263) |
|
|
Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
|
Mfr.#: SIHB12N60ET1-GE3 OMO.#: OMO-SIHB12N60ET1-GE3 |
MOSFET N-Channel 600V |
|
Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3-VISHAY |
Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS |
|
|
Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3-VISHAY |
IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS |
|
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Mfr.#: SIHB12N50C-E3 OMO.#: OMO-SIHB12N50C-E3-VISHAY |
IGBT Transistors MOSFET N-Channel 500V |
|
Mfr.#: SIHB12N60E OMO.#: OMO-SIHB12N60E-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SIHB12N60EGE3 OMO.#: OMO-SIHB12N60EGE3-1190 |
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SIHB12N65E OMO.#: OMO-SIHB12N65E-1190 |
신규 및 오리지널 |