SIHB12N65E-GE3

Mfr. #:: SIHB12N65E-GE3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHB12N65E-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SIHB12N65E-GE3 추가 정보

제품 속성
속성 값

Tags: SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB12N65E-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

부분 #	제조	설명	재고	가격
SIHB12N65E-GE3 DISTI # V36:1790_09219044	Vishay Intertechnologies	Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000000:$1.2910 500000:$1.2950 100000:$1.7320 10000:$2.5750 1000:$2.7200
SIHB12N65E-GE3 DISTI # SIHB12N65E-GE3-ND	Vishay Siliconix	MOSFET N-CH 650V 12A D2PAK Min Qty: 1 Container: Tube	3000In Stock	5000:$1.2594 2500:$1.2783 1000:$1.3730 500:$1.6571 100:$2.0169 10:$2.5090 1:$2.7900
SIHB12N65E-GE3 DISTI # SIHB12N65E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 12A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N65E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	4000:$1.1900 6000:$1.1900 10000:$1.1900 1000:$1.2900 2000:$1.2900
SIHB12N65E-GE3 DISTI # SIHB12N65E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 12A 3-Pin D2PAK (Alt: SIHB12N65E-GE3) Min Qty: 1	Europe - 0
SIHB12N65E-GE3 DISTI # 99W9446	Vishay Intertechnologies	N-CHANNEL 650V RoHS: Not Compliant	0	1000:$1.6300 500:$1.7400 250:$1.8700 100:$2.0400 1:$2.4900
SIHB12N65E-GE3 DISTI # 78-SIHB12N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2000	1:$2.7900 10:$2.3600 100:$1.9400 500:$1.8100 1000:$1.3700 2000:$1.2700 5000:$1.2500
SIHB12N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas -
SIHB12N65E-GE3 DISTI # 2400357	Vishay Intertechnologies	MOSFET, N CH, 650V, 12A, TO-263-3 RoHS: Compliant	289	5000:$1.9400 3000:$2.0100 1000:$2.1600 100:$3.1700 25:$3.7200 10:$3.9500 1:$4.3800
SIHB12N65E-GE3 DISTI # 2400357	Vishay Intertechnologies	MOSFET, N CH, 650V, 12A, TO-263-3 RoHS: Compliant	289	1000:£1.0400 500:£1.3500 250:£1.4400 100:£1.5400 10:£1.9900 1:£2.7200

관련 상품

영상	부분 #	설명
	Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3	MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB12N50E-GE3 OMO.#: OMO-SIHB12N50E-GE3	MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB12N50C-E3 OMO.#: OMO-SIHB12N50C-E3	MOSFET N-Channel 500V
	Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3-VISHAY	Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
	Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3-VISHAY	IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
	Mfr.#: SIHB12N50E-GE3 OMO.#: OMO-SIHB12N50E-GE3-VISHAY	IGBT Transistors MOSFET N-Channel 500V
	Mfr.#: SIHB12N60EGE3 OMO.#: OMO-SIHB12N60EGE3-1190	Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: SIHB12N60ET1-GE3 OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY	MOSFET N-CH 600V 12A TO263
	Mfr.#: SIHB12N60ET5-GE3 OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY	MOSFET N-CH 600V 12A TO263

유효성

재고:: Available
주문 시:: 3000
수량 입력:

SIHB12N65E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.78~~; ~~US$1.78~~

10: ~~US$1.70~~; ~~US$16.96~~

100: ~~US$1.61~~; ~~US$160.65~~

500: ~~US$1.52~~; ~~US$758.65~~

1000: ~~US$1.43~~; ~~US$1 428.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SIHB12N6 7
SIHB12N 10
SIHB12 11
SIHB1 27
SIHB 76
SIH 797

SIHB12N65E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes