IRF6662TR1PBF

IRF6662TR1PBF
Mfr. #:
IRF6662TR1PBF
제조사:
Infineon / IR
설명:
MOSFET MOSFT 100V 47A 22mOhm 22nC Qg
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF6662TR1PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6662TR1PBF DatasheetIRF6662TR1PBF Datasheet (P4-P6)IRF6662TR1PBF Datasheet (P7-P9)IRF6662TR1PBF Datasheet (P10)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
DirectFET-MZ
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
8.3 A
Rds On - 드레인 소스 저항:
17.5 mOhms
Vgs th - 게이트 소스 임계 전압:
4.9 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
22 nC
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
89 W
구성:
하나의
포장:
키:
0.7 mm
길이:
6.35 mm
트랜지스터 유형:
1 N-Channel
너비:
5.05 mm
상표:
인피니언 / IR
순방향 트랜스컨덕턴스 - 최소:
11 S
가을 시간:
5.9 ns
습기에 민감한:
상품 유형:
MOSFET
상승 시간:
7.5 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001559718
단위 무게:
0.035274 oz
Tags
IRF6662, IRF666, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 17.5 Milliohms; Id 8.3A; Mz; Pd 2.8W; Vgs +/-20
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:2.8mW; Transistor Case Style:DirectFET MZ; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:39mJ; Base Number:6662; Cont Current Id @ 70°C:6.6A; Current Id Max:6.6A; Fall Time tf:5.9ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C; Pulse Current Idm:66A; Rise Time:7.5ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:Surface Mount Device; Voltage Vds:25V; Voltage Vds Typ:100V; Voltage Vgs Max:3.9V; Voltage Vgs Rds on Measurement:10V
부분 # 제조 설명 재고 가격
IRF6662TR1PBF
DISTI # IRF6662TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6662TR1PBF
    DISTI # IRF6662TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6662TR1PBF
      DISTI # IRF6662TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 100V 8.3A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6662TR1PBF
        DISTI # 70017404
        Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 17.5 Milliohms,ID 8.3A,MZ,PD 2.8W,VGS +/-20
        RoHS: Compliant
        0
        • 1000:$1.9400
        • 2000:$1.7600
        IRF6662TR1PBF
        DISTI # 942-IRF6662TR1PBF
        Infineon Technologies AGMOSFET MOSFT 100V 47A 22mOhm 22nC Qg
        RoHS: Compliant
        0
          IRF6662TR1PBF
          DISTI # 1388570
          Infineon Technologies AGMOSFET, N, DIRECTFET, MZ
          RoHS: Compliant
          0
          • 2000:$2.3100
          • 1000:$2.4800
          • 500:$2.8000
          • 100:$3.1300
          • 10:$3.8700
          • 1:$4.7000
          영상 부분 # 설명
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF

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          Mfr.#: IRF6668TR1

          OMO.#: OMO-IRF6668TR1-INFINEON-TECHNOLOGIES

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          OMO.#: OMO-IRF6668-1190

          신규 및 오리지널
          IRF6668TR

          Mfr.#: IRF6668TR

          OMO.#: OMO-IRF6668TR-1190

          신규 및 오리지널
          IRF6668TR1PBF

          Mfr.#: IRF6668TR1PBF

          OMO.#: OMO-IRF6668TR1PBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 80V 55A DIRECTFET
          IRF6662TRPBF

          Mfr.#: IRF6662TRPBF

          OMO.#: OMO-IRF6662TRPBF-INFINEON-TECHNOLOGIES

          MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ
          유효성
          재고:
          Available
          주문 시:
          5000
          수량 입력:
          IRF6662TR1PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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