C3M0065090J

Mfr. #:: C3M0065090J
제조사:: N/A
설명:: MOSFET G3 SiC MOSFET 900V, 65mOhm
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: C3M0065090J 데이터 시트
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ECAD Model:
추가 정보:: C3M0065090J 추가 정보

제품 속성
속성 값

제조사:: 주식회사 크리

제품 카테고리:: MOSFET

RoHS:: Y

기술:: SiC

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-7

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 900 V

Id - 연속 드레인 전류:: 35 A

Rds On - 드레인 소스 저항:: 90 mOhms

Vgs th - 게이트 소스 임계 전압:: 1.8 V

Vgs - 게이트 소스 전압:: 18 V, - 8 V

Qg - 게이트 차지:: 30 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 113 W

구성:: 하나의

채널 모드:: 상승

포장:: 튜브

제품:: 파워 MOSFET

유형:: 실리콘 카바이드 MOSFET

상표:: 울프스피드 / 크리어

순방향 트랜스컨덕턴스 - 최소:: 11.6 S

가을 시간:: 5 ns

상품 유형:: MOSFET

상승 시간:: 6.5 ns

공장 팩 수량:: 50

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 15 ns

일반적인 켜기 지연 시간:: 7.2 ns

단위 무게:: 0.056438 oz

Tags: C3M00650, C3M006, C3M00, C3M0, C3M

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

C3M0065090J 설명

***ical: Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK Tube

***Components: N-CHAN SIC MOSFET 900V 35A D2PAK-7

***i-Key: MOSFET N-CH 900V 35A D2PAK-7

***ark: MOSFET, N-CH, 900V, 35A, TO-263

***hardson RFPD: SILICON CARBIDE POWER TRANSISTORS/MODULES

C3M0065090J 추가 정보

C3M™ Family Silicon Carbide Power MOSFETs: Cree C3M™ Family Silicon Carbide Power MOSFETs are the latest breakthrough in SiC power device technology and the industry's first 900V MOSFET platform. They are optimized for high-frequency power electronic applications. This includes renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies. The new 900V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

Market price

부분 #	제조	설명	재고	가격
C3M0065090J DISTI # V36:1790_06265413	Cree, Inc.	Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK RoHS: Compliant	620	100:$10.0760 25:$10.5450 10:$10.6910 1:$10.7990
C3M0065090J DISTI # V99:2348_06265413	Cree, Inc.	Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK RoHS: Compliant	207	100:$10.0760 25:$10.5450 10:$10.6910 1:$10.7990
C3M0065090J-TR DISTI # V72:2272_06265414	Cree, Inc.	900V, 65 MOHM, G3 SIC MOSFET O	85	25:$10.0830 10:$10.1850 1:$10.2880
C3M0065090J-TR DISTI # V36:1790_06265414	Cree, Inc.	900V, 65 MOHM, G3 SIC MOSFET O	0	16000:$9.9820 1600:$10.1700
C3M0065090J DISTI # C3M0065090J-ND	Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Tube	15239In Stock	100:$10.3075 1:$10.3100
C3M0065090J-TR DISTI # C3M0065090J-TR-ND	Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 RoHS: Compliant Min Qty: 1600 Container: Tape & Reel (TR)	Temporarily Out of Stock	1600:$10.3075
C3M0065090J DISTI # 33931660	Cree, Inc.	Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK RoHS: Compliant	7350	1000:$9.6525 500:$9.7614 100:$9.9990 50:$10.7217
C3M0065090J DISTI # 31642234	Cree, Inc.	Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK RoHS: Compliant	620	100:$10.0760 25:$10.5450 10:$10.6910 1:$10.7990
C3M0065090J DISTI # 31335317	Cree, Inc.	Trans MOSFET N-CH SiC 900V 35A 8-Pin(7+Tab) D2PAK RoHS: Compliant	207	100:$10.0760 25:$10.5450 10:$10.6910 1:$10.7990
C3M0065090J-TR DISTI # 32435475	Cree, Inc.	900V, 65 MOHM, G3 SIC MOSFET O	85	25:$10.0830 10:$10.1850 1:$10.2880
C3M0065090J DISTI # 49Y7400	Wolfspeed	MOSFET, N-CH, 900V, 35A, TO-263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:15V,Threshold Voltage Vgs:2.1V,MSL:- RoHS Compliant: Yes	0	1000:$10.3100 500:$10.8500 250:$11.5500 100:$12.4000 50:$13.5700 25:$14.7300 10:$15.9700 1:$17.3600
C3M0065090J DISTI # 98Y6017	Wolfspeed	MOSFET, N-CH, 900V, 35A, TO-263,TRANSISTOR POLARITY:N CHANNEL,CONTINUOUS DRAIN CURRENT ID:35A,DRAIN SOURCE VOLTAGE VDS:900V,ON RESISTANCE RDS(ON):0.065OHM,RDS(ON) TEST VOLTAGE VGS:15V,THRESHOLD VOLTAGE VGS:2.1V,POWER ROHS COMPLIANT: YES	114	500:$9.9600 250:$10.0800 100:$10.2000 50:$10.3900 25:$10.5700 10:$10.7600 1:$11.2700
C3M0065090J-TR DISTI # 49Y7401	Wolfspeed	MOSFET, N-CH, 900V, 35A, TO-263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:15V,Threshold Voltage Vgs:2.1V,MSL:- RoHS Compliant: Yes	0	1200:$9.2300 800:$9.6900 400:$10.0000 200:$10.3100 1:$10.8500
C3M0065090J DISTI # 941-C3M0065090J	Cree, Inc.	MOSFET G3 SiC MOSFET 900V, 65mOhm RoHS: Compliant	4096	1:$10.8300 100:$10.1000 500:$9.8600
C3M0065090J-TR DISTI # 941-C3M0065090J-TR	Cree, Inc.	MOSFET G3 SiC MOSFET 900V, 65mOhm RoHS: Compliant	239	1:$10.3100 100:$9.9400 500:$9.4500
C3M0065090J DISTI # 9158830P	Cree, Inc.	N-CHAN SIC MOSFET 900V 35A D2PAK-7, TU	3949	100:£7.0100 50:£7.1400 25:£7.4300 10:£7.6300
C3M0065090J DISTI # 9158830	Cree, Inc.	N-CHAN SIC MOSFET 900V 35A D2PAK-7, EA	134	100:£7.0100 50:£7.1400 25:£7.4300 10:£7.6300 1:£7.9900
C3M0065090J DISTI # C3M0065090J	Wolfspeed	Transistor: N-MOSFET,SiC,unipolar,900V,35A,113W,D2PAK-7,16ns	59	10:$12.2000 3:$15.2900 1:$17.6000
C3M0065090J DISTI # 2630833	Wolfspeed	MOSFET, N-CH, 900V, 35A, TO-263 RoHS: Compliant	1091	1:$17.2500
C3M0065090J DISTI # 2630833	Wolfspeed	MOSFET, N-CH, 900V, 35A, TO-263 RoHS: Compliant	1252	100:£8.2300 50:£8.2900 10:£8.3400 5:£8.4000 1:£9.0200
C3M0065090J DISTI # C3M0065090J	Wolfspeed	SILICON CARBIDE MOSFETS RoHS: Compliant	43619	1:$10.1400 11:$9.8400 51:$9.4100
C3M0065090J-TR DISTI # C3M0065090J-TR	Wolfspeed	SILICON CARBIDE MOSFETS RoHS: Compliant	32800

영상	부분 #	설명
	Mfr.#: UCC21521DW OMO.#: OMO-UCC21521DW	Gate Drivers 4-A, 6-A Iso Dual Channel Gate Driver
	Mfr.#: C3M0280090J OMO.#: OMO-C3M0280090J	MOSFET G3 SiC MOSFET 900V, 280 mOhm
	Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR	MOSFET 650V 30A E-Mode GaN
	Mfr.#: NVTR4503NT1G OMO.#: OMO-NVTR4503NT1G	MOSFET NFET SOT23 30V 2A 0.110R
	Mfr.#: FDD6N50TM OMO.#: OMO-FDD6N50TM	MOSFET 500V 6A 760mOhms
	Mfr.#: C3M0075120J OMO.#: OMO-C3M0075120J	MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
	Mfr.#: C3M0120090D OMO.#: OMO-C3M0120090D	MOSFET G3 SiC MOSFET 900V, 120mOhm
	Mfr.#: C3M0065100J OMO.#: OMO-C3M0065100J	MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7
	Mfr.#: LMG1020YFFR OMO.#: OMO-LMG1020YFFR	Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
	Mfr.#: C3M0120090D OMO.#: OMO-C3M0120090D-WOLFSPEED	900V, 120 MOHM, G3 SIC MOSFET

C3M0065090J

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes