IGOT60R070D1AUMA1

IGOT60R070D1AUMA1
Mfr. #:
IGOT60R070D1AUMA1
제조사:
Infineon Technologies
설명:
MOSFET 600V CoolGaN Power Transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IGOT60R070D1AUMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IGOT60R070D1AUMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
GaN
장착 스타일:
SMD/SMT
패키지/케이스:
PG-DSO-20
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
31 A
Rds On - 드레인 소스 저항:
70 mOhms
Vgs th - 게이트 소스 임계 전압:
0.9 V
Vgs - 게이트 소스 전압:
10 V
Qg - 게이트 차지:
5.8 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
125 W
채널 모드:
상승
상표명:
CoolGaN
포장:
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
13 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
15 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
SP001505772
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
부분 # 제조 설명 재고 가격
IGOT60R070D1AUMA1
DISTI # V72:2272_22710691
Infineon Technologies AGIGOT60R070D1AUMA1293
  • 75000:$15.6200
  • 30000:$15.7200
  • 15000:$15.8200
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1CT-ND
Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1DKR-ND
Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1TR-ND
Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$17.0240
IGOT60R070D1AUMA1
DISTI # 32907523
Infineon Technologies AGIGOT60R070D1AUMA1293
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1
Infineon Technologies AGTrans MOSFET N-CH 600V 60A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGOT60R070D1AUMA1)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 8000:$14.8900
  • 4800:$15.0900
  • 3200:$15.6900
  • 1600:$16.2900
  • 800:$16.8900
IGOT60R070D1AUMA1
DISTI # 84AC1769
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes87
  • 500:$16.3800
  • 250:$17.2100
  • 100:$18.0400
  • 50:$19.1100
  • 25:$20.1800
  • 10:$21.1300
  • 1:$22.9100
IGOT60R070D1AUMA1
DISTI # 726-IGOT60R070D1AUMA
Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant
468
  • 1:$22.6800
  • 5:$22.4400
  • 10:$20.9200
  • 25:$19.9800
  • 100:$17.8600
  • 250:$17.0400
  • 500:$16.2200
  • 800:$14.1000
IGOT60R070D1AUMA1
DISTI # 2981533
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W87
  • 100:£13.0800
  • 50:£13.8600
  • 10:£14.6300
  • 5:£16.4300
  • 1:£16.6000
IGOT60R070D1AUMA1
DISTI # 2981533
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
RoHS: Compliant
87
  • 800:$22.9000
  • 500:$26.0500
  • 100:$26.9300
  • 50:$29.3700
  • 1:$32.3000
  • 10:$32.3000
영상 부분 # 설명
1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148

Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1

MOSFET 600V CoolGaN Power Transistor
IGT60R190D1SATMA1

Mfr.#: IGT60R190D1SATMA1

OMO.#: OMO-IGT60R190D1SATMA1

MOSFET 600V CoolGaN Power Transistor
IGO60R070D1AUMA1

Mfr.#: IGO60R070D1AUMA1

OMO.#: OMO-IGO60R070D1AUMA1

MOSFET 600V CoolGaN Power Transistor
IGLD60R070D1AUMA1

Mfr.#: IGLD60R070D1AUMA1

OMO.#: OMO-IGLD60R070D1AUMA1

MOSFET 600V CoolGaN Power Transistor
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

MOSFET MOSFET 600VDC 190mohm X-GaN
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
ACPL-P346-000E

Mfr.#: ACPL-P346-000E

OMO.#: OMO-ACPL-P346-000E

Logic Output Optocouplers OPTOCOUPLER GATE DRV, LF
1EDF5673FXUMA1

Mfr.#: 1EDF5673FXUMA1

OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

IC DRIVER IC GAN DSO-16-11
1EDS5663HXUMA1

Mfr.#: 1EDS5663HXUMA1

OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

IC DRIVER IC GAN DSO-16
유효성
재고:
464
주문 시:
2447
수량 입력:
IGOT60R070D1AUMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$22.68
US$22.68
5
US$22.44
US$112.20
10
US$20.92
US$209.20
25
US$19.98
US$499.50
100
US$17.86
US$1 786.00
250
US$17.04
US$4 260.00
500
US$16.22
US$8 110.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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