BSC123N08NS3GATMA1

BSC123N08NS3GATMA1
Mfr. #:
BSC123N08NS3GATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 80V 55A TDSON-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSC123N08NS3GATMA1 데이터 시트
배달:
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지불:
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ECAD Model:
제품 속성
속성 값
제조사
인피니오
제품 카테고리
FET - 단일
시리즈
옵티모스
포장
Digi-ReelR 대체 패키징
부분 별칭
BSC123N08NS3 BSC123N08NS3GXT G SP000443916
장착 스타일
SMD/SMT
상표명
옵티모스
패키지 케이스
8-PowerTDFN
기술
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
PG-TDSON-8
구성
하나의
FET형
MOSFET N-채널, 금속 산화물
파워맥스
66W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
80V
입력-커패시턴스-Ciss-Vds
1870pF @ 40V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
11A (Ta), 55A (Tc)
Rds-On-Max-Id-Vgs
12.3 mOhm @ 33A, 10V
Vgs-th-Max-Id
3.5V @ 33μA
Gate-Charge-Qg-Vgs
25nC @ 10V
Pd 전력 손실
66 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
4 ns
상승 시간
18 ns
Vgs 게이트 소스 전압
+/- 20 V
Id-연속-드레인-전류
55 A
Vds-드레인-소스-고장-전압
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
12.3 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
19 ns
일반 켜기 지연 시간
12 ns
Qg-Gate-Charge
19 nC
순방향 트랜스컨덕턴스-최소
44 S
채널 모드
상승
Tags
BSC123N08NS3G, BSC123N08NS, BSC123N0, BSC123, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 55A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
부분 # 제조 설명 재고 가격
BSC123N08NS3GATMA1
DISTI # V72:2272_06384483
Infineon Technologies AGTrans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
RoHS: Compliant
4438
  • 75000:$0.3715
  • 30000:$0.3735
  • 15000:$0.3755
  • 6000:$0.4207
  • 3000:$0.4693
  • 1000:$0.4742
  • 500:$0.5939
  • 250:$0.6449
  • 100:$0.6523
  • 50:$0.8040
  • 25:$0.8141
  • 10:$0.8459
  • 1:$0.9583
BSC123N08NS3GATMA1
DISTI # BSC123N08NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 55A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
150712In Stock
  • 1000:$0.6183
  • 500:$0.7831
  • 100:$1.0098
  • 10:$1.2780
  • 1:$1.4400
BSC123N08NS3GATMA1
DISTI # BSC123N08NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 55A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
150712In Stock
  • 1000:$0.6183
  • 500:$0.7831
  • 100:$1.0098
  • 10:$1.2780
  • 1:$1.4400
BSC123N08NS3GATMA1
DISTI # BSC123N08NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 55A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
145000In Stock
  • 5000:$0.5322
BSC123N08NS3GATMA1
DISTI # 31074817
Infineon Technologies AGTrans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
RoHS: Compliant
4538
  • 6000:$0.4207
  • 3000:$0.4694
  • 1000:$0.4743
  • 500:$0.5907
  • 250:$0.6450
  • 100:$0.6525
  • 50:$0.8043
  • 25:$0.8142
  • 16:$0.8396
BSC123N08NS3GXT
DISTI # BSC123N08NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 45000
  • 5000:$0.4189
  • 10000:$0.4039
  • 20000:$0.3889
  • 30000:$0.3759
  • 50000:$0.3689
BSC123N08NS3GATMA1
DISTI # 60R2515
Infineon Technologies AGMOSFET, N CHANNEL, 80V, 55A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:55A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes5931
  • 1:$1.3200
  • 10:$1.1200
  • 100:$0.8610
  • 500:$0.7610
  • 1000:$0.6010
  • 2500:$0.5570
  • 10000:$0.5130
BSC123N08NS3 G
DISTI # 726-BSC123N08NS3G
Infineon Technologies AGMOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
RoHS: Compliant
20321
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7830
  • 500:$0.6920
  • 1000:$0.5460
BSC123N08NS3GATMA1
DISTI # 726-BSC123N08NS3GATM
Infineon Technologies AGMOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
RoHS: Compliant
275
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7830
  • 500:$0.6920
  • 1000:$0.5460
BSC123N08NS3GATMA1
DISTI # 7545301
Infineon Technologies AGMOSFET N-CHANNEL 80V 11A OPTIMOS3 TDSON8, PK870
  • 5:£0.7440
  • 50:£0.4440
  • 250:£0.3960
  • 1250:£0.3500
  • 2500:£0.3440
BSC123N08NS3GATMA1
DISTI # 7545301P
Infineon Technologies AGMOSFET N-CHANNEL 80V 11A OPTIMOS3 TDSON8, RL14935
  • 50:£0.4440
  • 250:£0.3960
  • 1250:£0.3500
  • 2500:£0.3440
BSC123N08NS3GATMA1
DISTI # BSC123N08NS3GATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,80V,55A,66W,PG-TDSON-82
  • 1:$0.6309
  • 3:$0.5582
  • 10:$0.4686
  • 100:$0.4114
  • 1000:$0.3703
BSC123N08NS3GATMA1
DISTI # C1S322000210916
Infineon Technologies AGTrans MOSFET N-CH 80V 11A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4538
  • 100:$0.6523
  • 50:$0.8040
  • 25:$0.8141
  • 10:$0.8459
BSC123N08NS3GATMA1
DISTI # 1775469
Infineon Technologies AGMOSFET, N CH, 55A, 80V, PG-TDSON-8
RoHS: Compliant
8181
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.2400
  • 500:$1.1000
  • 1000:$0.8650
  • 5000:$0.7660
BSC123N08NS3GATMA1
DISTI # 1775469
Infineon Technologies AGMOSFET, N CH, 55A, 80V, PG-TDSON-8
RoHS: Compliant
6471
  • 5:£0.7590
  • 25:£0.4530
  • 100:£0.4290
  • 250:£0.4040
  • 500:£0.3780
영상 부분 # 설명
BSC123N08NS3 G

Mfr.#: BSC123N08NS3 G

OMO.#: OMO-BSC123N08NS3-G

MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N08NS3GATMA1

Mfr.#: BSC123N08NS3GATMA1

OMO.#: OMO-BSC123N08NS3GATMA1

MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N08NS3GXT

Mfr.#: BSC123N08NS3GXT

OMO.#: OMO-BSC123N08NS3GXT-1190

Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1)
BSC123N08N

Mfr.#: BSC123N08N

OMO.#: OMO-BSC123N08N-1190

신규 및 오리지널
BSC123N08NS3

Mfr.#: BSC123N08NS3

OMO.#: OMO-BSC123N08NS3-1190

신규 및 오리지널
BSC123N08NS3 G

Mfr.#: BSC123N08NS3 G

OMO.#: OMO-BSC123N08NS3-G-1190

Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP
BSC123N08NS3G

Mfr.#: BSC123N08NS3G

OMO.#: OMO-BSC123N08NS3G-1190

Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G)
BSC123N08NS3GATMA1

Mfr.#: BSC123N08NS3GATMA1

OMO.#: OMO-BSC123N08NS3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 80V 55A TDSON-8
BSC123N08NS3GATMA1 , TDZ

Mfr.#: BSC123N08NS3GATMA1 , TDZ

OMO.#: OMO-BSC123N08NS3GATMA1-TDZ-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
1000
수량 입력:
BSC123N08NS3GATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.47
US$0.47
10
US$0.45
US$4.50
100
US$0.43
US$42.61
500
US$0.40
US$201.20
1000
US$0.38
US$378.70
시작
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