BSC12

BSC120N03LS G vs BSC120N03LSGATMA1 vs BSC120N03MS G

 
PartNumberBSC120N03LS GBSC120N03LSGATMA1BSC120N03MS G
DescriptionMOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current39 A39 A39 A
Rds On Drain Source Resistance10 mOhms10 mOhms10 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge15 nC15 nC20 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation28 W28 W28 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
SeriesOptiMOS 3OptiMOS 3OptiMOS 3M
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min25 S25 S25 S
Fall Time2.2 ns2.2 ns5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.2 ns2.2 ns4.4 ns
Factory Pack Quantity500050005000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12 ns12 ns7 ns
Typical Turn On Delay Time2.7 ns2.7 ns7.9 ns
Part # AliasesBSC120N03LSGATMA1 BSC12N3LSGXT SP000302848BSC120N03LS BSC12N3LSGXT G SP000302848BSC120N03MSGATMA1 BSC12N3MSGXT SP000311516
Unit Weight-0.008536 oz0.003527 oz
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
BSC123N08NS3 G MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N08NS3GATMA1 MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N10LS G MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
BSC123N10LSGATMA1 MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
BSC120N03LS G MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
BSC120N03LSGATMA1 MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3
BSC120N03MSGATMA1 MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
BSC12DN20NS3 G MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC120N03MS G MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
BSC12DN20NS3G MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC120N03LSGATMA1 MOSFET N-CH 30V 39A TDSON-8
BSC120N03MSGATMA1 MOSFET N-CH 30V 39A TDSON-8
BSC123N08NS3GATMA1 MOSFET N-CH 80V 55A TDSON-8
BSC12DN20NS3GATMA1 MOSFET N-CH 200V 11.3A 8TDSON
BSC123N10LSGATMA1 MOSFET N-CH 100V 71A TDSON-8
BSC123N08NS3GXT Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1)
BSC12DN20NS3 G MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC12DN20NS3GXT Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)
BSC120 신규 및 오리지널
BSC120N03LS 신규 및 오리지널
BSC120N03LS G Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC120N03LS G)
BSC120N03LS G 120N03LS 신규 및 오리지널
BSC120N03LSG Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC120N03LSG , TDZ15J , 신규 및 오리지널
BSC120N03LSGATMA1 , TDZ1 신규 및 오리지널
BSC120N03MS 신규 및 오리지널
BSC120N03MS G Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP
BSC120N03MSG Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP (Alt: BSC120N03MS G)
BSC120N03MSG , TDZ3V6J , 신규 및 오리지널
BSC120N03MSG,30V,39A, 신규 및 오리지널
BSC120N03MSGATMA1 , TDZ5 신규 및 오리지널
BSC120N03S 신규 및 오리지널
BSC123N08N 신규 및 오리지널
BSC123N08NS3 신규 및 오리지널
BSC123N08NS3 G Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP
BSC123N08NS3G Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G)
BSC123N08NS3GATMA1 , TDZ 신규 및 오리지널
BSC123N10LS 신규 및 오리지널
BSC123N10LS G 신규 및 오리지널
BSC123N10LSG Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP
BSC123N10LSGATMA1 , TDZ7 신규 및 오리지널
BSC120N03LSGATMA1-CUT TAPE 신규 및 오리지널
BSC123N10LS G RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
BSC12DN20NS3G RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
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