BSC1

BSC100N03MSGATMA1 vs BSC100N03MS G vs BSC100N03LSGATMA1

 
PartNumberBSC100N03MSGATMA1BSC100N03MS GBSC100N03LSGATMA1
DescriptionMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3MMOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3MMOSFET N-CH 30V 44A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current44 A44 A-
Rds On Drain Source Resistance8.3 mOhms8.3 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge23 nC23 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation30 W30 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3MOptiMOS 3M-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min27 S27 S-
Fall Time5.4 ns5.4 ns-
Product TypeMOSFETMOSFET-
Rise Time4.8 ns4.8 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8 ns8 ns-
Typical Turn On Delay Time8.5 ns8.5 ns-
Part # AliasesBSC100N03MS BSC1N3MSGXT G SP000311515BSC100N03MSGATMA1 BSC1N3MSGXT SP000311515-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
BSC100N06LS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC110N06NS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC110N06NS3GATMA1 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC100N10NSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC100N06LS3GATMA1 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC109N10NS3 G MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
BSC100N03MSGATMA1 MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
BSC100N03MS G MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M
BSC105N10LSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC100N03LSGATMA1 MOSFET N-CH 30V 44A TDSON-8
BSC100N06LS3GATMA1 MOSFET N-CH 60V 50A TDSON-8
BSC100N10NSFGATMA1 MOSFET N-CH 100V 90A TDSON-8
BSC106N025S G MOSFET N-CH 25V 30A TDSON-8
BSC109N10NS3GATMA1 MOSFET N-CH 100V 63A 8TDSON
BSC110N06NS3GATMA1 MOSFET N-CH 60V 50A TDSON-8
BSC105N10LSFGATMA1 MOSFET N-CH 100V 90A TDSON-8
BSC100N03MSGATMA1 MOSFET N-CH 30V 44A TDSON-8
Infineon Technologies
Infineon Technologies
BSC105N10LSFGATMA1 MOSFET MV POWER MOS
BSC100N10NSFGXT Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON - Tape and Reel (Alt: BSC100N10NSFGATMA1)
BSC109N10NS3GXT Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1)
BSC100N03LS 신규 및 오리지널
BSC100N03LS G MOSFET, N CH, 30V, 44A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:44A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Th
BSC100N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC100N03LSG , TDZ TR 6. 신규 및 오리지널
BSC100N03LSG,100N03LS, 신규 및 오리지널
BSC100N03MS 신규 및 오리지널
BSC100N03MS G Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP
BSC100N03MSG Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC100N03MS G)
BSC100N03MSGATMA1 , TDZ 신규 및 오리지널
BSC100N06LS 신규 및 오리지널
BSC100N06LS3 G Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
BSC100N06LS3G 60V,50A,N Channel Power MOSFET
BSC100N06LS3GXT 신규 및 오리지널
BSC100N10NS 신규 및 오리지널
BSC100N10NSFG 100V,90A,N Channel Power MOSFET
BSC105N10LS 신규 및 오리지널
BSC105N10LSFG 신규 및 오리지널
BSC105N10LSFGXT 신규 및 오리지널
BSC106N025SG 신규 및 오리지널
BSC109N10NS3 G MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
BSC109N10NS3G Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)
BSC110N06NS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC110N06NS3G Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R (Alt: BSC110N06NS3 G)
BSC110N06NS3GATMA1 , TDZ 신규 및 오리지널
BSC110N06S3G 신규 및 오리지널
BSC110N15NS5 신규 및 오리지널
BSC110N15NS53 신규 및 오리지널
BSC105N10LSFGATMA1-CUT TAPE 신규 및 오리지널
BSC100N10NSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC105N10LSF G MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
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