IRF6665TRPBF

IRF6665TRPBF
Mfr. #:
IRF6665TRPBF
제조사:
Infineon Technologies
설명:
MOSFET 100V 1 x N-CH HEXFET for Digital Audio
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF6665TRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6665TRPBF DatasheetIRF6665TRPBF Datasheet (P4-P6)IRF6665TRPBF Datasheet (P7-P9)IRF6665TRPBF Datasheet (P10)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
DirectFET-SH
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
4.2 A
Rds On - 드레인 소스 저항:
53 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
8.7 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
42 W
구성:
하나의
채널 모드:
상승
상표명:
다이렉트펫
포장:
키:
0.7 mm
길이:
4.85 mm
트랜지스터 유형:
1 N-Channel
너비:
3.95 mm
상표:
인피니언 테크놀로지스
가을 시간:
4.3 ns
상품 유형:
MOSFET
상승 시간:
2.8 ns
공장 팩 수량:
4800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
14 ns
일반적인 켜기 지연 시간:
7.4 ns
부품 번호 별칭:
SP001559710
Tags
IRF6665T, IRF6665, IRF666, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 100V 4.2A DIRECTFET / Trans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
***ure Electronics
Single N-Channel 100 V 62 mOhm 8.4 nC HEXFET® Power Mosfet - DirectFET®
***(Formerly Allied Electronics)
MOSFET, 100V, 19A, 62 MOHM, 8.7 NC QG, SMALL CAN, OPTIMIZED FOR AUDIO
***ment14 APAC
MOSFET, N-CH, 100V, 19A, DIRECTFET SH; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Source Voltage Vds:100V; On Resistance
***ernational Rectifier
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes specifically designed for Class-D audio amplifier applications. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part nu
***ineon
Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***nell
MOSFET, N-CH, 100V, 19A, DIRECTFET SH; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.053ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 42W; Transistor Case Style: DirectFET SH; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans MOSFET N-CH 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
***ineon SCT
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperesr., MG-WDSON-4, RoHS
***ark
N Channel, MOSFET, 100V, 14.4A, DirectFET SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***ernational Rectifier
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes with optimized gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors su
***ineon
Benefits: Advanced process technology; Exceptionally small footprint and low profile; High power density; Low parasitic parameters; Dual-sided cooling; 175C operating temperature; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant and halogen free; Automotive qualified
***(Formerly Allied Electronics)
A 100V DIGITAL AUDIO SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET SB PACK
***ment14 APAC
MOSFET, N-CH, 100V, 14.4A, SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14.4A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ernational Rectifier
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied
***ineon
Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Class-D Audio Amplifier Applications; Low Qg for better THD and improved efficiency; Low Qrr for better THD and improved efficiency; Low package stray inductance for reduced ringing and lower EMI | Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ical
Trans MOSFET N-CH Si 100V 5.9A Automotive 7-Pin Direct-FET SC T/R
***ark
MOSFET, N-CH, 100V, 24A, 175DEG C, 41W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:24A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 24.0 amperes, MG-WDSON-5, RoHS
***ernational Rectifier
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 24.0 amperes with optimized gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors su
***ure Electronics
Single N-Channel 100 V 0.16 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 100V, 14A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
***ark
MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
***emi
N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK
***ure Electronics
N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
부분 # 제조 설명 재고 가격
IRF6665TRPBF
DISTI # 31238421
Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
RoHS: Compliant
4800
  • 4800:$0.5467
IRF6665TRPBF
DISTI # 31234197
Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
RoHS: Compliant
100
  • 100:$0.8606
  • 50:$0.9856
  • 16:$1.4663
IRF6665TRPBF
DISTI # IRF6665TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 100V 4.2A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4624In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
IRF6665TRPBF
DISTI # IRF6665TRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 100V 4.2A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4624In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
IRF6665TRPBF
DISTI # IRF6665TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 100V 4.2A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4800:$0.4506
IRF6665TRPBF
DISTI # C1S322000579590
Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
RoHS: Compliant
100
  • 100:$0.6750
  • 50:$0.7730
  • 10:$1.1500
  • 5:$1.2800
IRF6665TRPBF
DISTI # V72:2272_13891173
Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
RoHS: Compliant
5067
  • 75000:$0.3542
  • 30000:$0.3559
  • 15000:$0.3594
  • 6000:$0.3630
  • 3000:$0.4918
  • 1000:$0.4972
  • 500:$0.5024
  • 250:$0.5603
  • 100:$0.5666
  • 50:$0.7016
  • 25:$0.7100
  • 10:$0.7189
  • 1:$0.8237
IRF6665TRPBF
DISTI # IRF6665TRPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 4.2A 6-Pin Direct-FET SH T/R - Tape and Reel (Alt: IRF6665TRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Reel
Americas - 0
  • 4800:$0.4429
  • 9600:$0.4269
  • 19200:$0.4119
  • 28800:$0.3979
  • 48000:$0.3909
IRF6665TRPBF
DISTI # IRF6665TRPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 4.2A 6-Pin Direct-FET SH T/R (Alt: IRF6665TRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel
Asia - 0
    IRF6665TRPBF
    DISTI # SP001559710
    Infineon Technologies AGTrans MOSFET N-CH 100V 4.2A 6-Pin Direct-FET SH T/R (Alt: SP001559710)
    RoHS: Compliant
    Min Qty: 4800
    Container: Tape and Reel
    Europe - 0
    • 4800:€0.5599
    • 9600:€0.4579
    • 19200:€0.4199
    • 28800:€0.3869
    • 48000:€0.3599
    IRF6665TRPBF
    DISTI # 91Y4745
    Infineon Technologies AGMOSFET, N-CH, 100V, 19A, DIRECTFET SH,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes6570
    • 1:$1.0200
    • 10:$0.8630
    • 25:$0.7960
    • 50:$0.7300
    • 100:$0.6630
    • 250:$0.6250
    • 500:$0.5860
    • 1000:$0.4620
    IRF6665TRPBF
    DISTI # 70019586
    Infineon Technologies AGMOSFET,100V,19A,62 MOHM,8.7 NC QG,SMALL CAN,OPTIMIZED FOR AUDIO
    RoHS: Compliant
    0
    • 4800:$1.2640
    • 9600:$1.2390
    • 24000:$1.2010
    IRF6665TRPBF
    DISTI # 942-IRF6665TRPBF
    Infineon Technologies AGMOSFET 100V 1 x N-CH HEXFET for Digital Audio
    RoHS: Compliant
    2625
    • 1:$1.0200
    • 10:$0.8630
    • 100:$0.6630
    • 500:$0.5860
    • 1000:$0.4620
    • 2500:$0.4100
    IRF6665TRPBFInfineon Technologies AGSingle N-Channel 100 V 62 mOhm 8.4 nC HEXFET Power Mosfet - DirectFET
    RoHS: Compliant
    4800Reel
    • 4800:$0.3900
    IRF6665TRPBFInternational Rectifier 3140
    • 886:$2.0550
    • 396:$2.2605
    • 1:$4.1100
    IRF6665TRPBFInternational RectifierINSTOCK4654
      IRF6665TRPBF
      DISTI # XSLY00000000779
      INFINEON/IRDirectFET SH
      RoHS: Compliant
      4800
      • 4800:$0.5100
      IRF6665TRPBF
      DISTI # XSFP00000164256
      Infineon Technologies AGSingle N-Channel 100 V 62 mOhm 8.4 nC HEXFETPowerMosfet - DirectFET
      RoHS: Compliant
      6461
      • 4800:$0.5200
      • 6461:$0.4875
      IRF6665TRPBFInternational RectifierRoHS (ship within 1day)3925
      • 1:$3.5200
      • 10:$2.6700
      • 50:$2.1100
      • 100:$1.6600
      • 500:$1.4100
      • 1000:$1.3700
      IRF6665TRPBF
      DISTI # 2579987
      Infineon Technologies AGMOSFET, N-CH, 100V, 19A, DIRECTFET SH
      RoHS: Compliant
      1770
      • 1:$1.9400
      • 10:$1.7200
      • 100:$1.3600
      • 500:$1.0500
      • 1000:$0.8290
      IRF6665TRPBF
      DISTI # 2579987
      Infineon Technologies AGMOSFET, N-CH, 100V, 19A, DIRECTFET SH
      RoHS: Compliant
      7090
      • 5:£0.9170
      • 25:£0.8270
      • 100:£0.6530
      • 250:£0.5800
      • 500:£0.5070
      영상 부분 # 설명
      AD8065ARTZ-R2

      Mfr.#: AD8065ARTZ-R2

      OMO.#: OMO-AD8065ARTZ-R2

      Operational Amplifiers - Op Amps SOT23 Hi Perf Hi Spd FET Amp w/ Disable
      1N4148W-7-F

      Mfr.#: 1N4148W-7-F

      OMO.#: OMO-1N4148W-7-F

      Diodes - General Purpose, Power, Switching SURFACE MOUNT FAST SWITCHING DIODE
      1N4448W-7-F

      Mfr.#: 1N4448W-7-F

      OMO.#: OMO-1N4448W-7-F

      Diodes - General Purpose, Power, Switching Vr/75V Io/250mA T/R
      BAT46WJ,115

      Mfr.#: BAT46WJ,115

      OMO.#: OMO-BAT46WJ-115

      Schottky Diodes & Rectifiers Schottky Diodes 100V 250mA Single
      LTST-C150YKT

      Mfr.#: LTST-C150YKT

      OMO.#: OMO-LTST-C150YKT

      Standard LEDs - SMD Yellow Clear 588nm
      LTST-C150GKT

      Mfr.#: LTST-C150GKT

      OMO.#: OMO-LTST-C150GKT

      Standard LEDs - SMD Green Clear 569nm
      5-535541-4

      Mfr.#: 5-535541-4

      OMO.#: OMO-5-535541-4

      Headers & Wire Housings RECEPT 6POS VERT .100 AU
      LTST-C150CKT

      Mfr.#: LTST-C150CKT

      OMO.#: OMO-LTST-C150CKT

      Standard LEDs - SMD Red Clear 638nm
      ERA-8AEB6981V

      Mfr.#: ERA-8AEB6981V

      OMO.#: OMO-ERA-8AEB6981V-PANASONIC

      Thin Film Resistors - SMD 1206 6.98Kohm 25ppm 0.1% Tol
      AD8065ARTZ-R2

      Mfr.#: AD8065ARTZ-R2

      OMO.#: OMO-AD8065ARTZ-R2-ANALOG-DEVICES-INC-ADI

      Operational Amplifiers - Op Amps SOT23 Hi Perf Hi Spd FET Amp w/ Disable
      유효성
      재고:
      Available
      주문 시:
      1990
      수량 입력:
      IRF6665TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.01
      US$1.01
      10
      US$0.86
      US$8.63
      100
      US$0.66
      US$66.30
      500
      US$0.59
      US$293.00
      1000
      US$0.46
      US$462.00
      2500
      US$0.41
      US$1 025.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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