IRF6665T

IRF6665TRPBF vs IRF6665TR1PBF vs IRF6665TR1

 
PartNumberIRF6665TRPBFIRF6665TR1PBFIRF6665TR1
DescriptionMOSFET 100V 1 x N-CH HEXFET for Digital AudioMOSFET 100V N-CH DirectFET for Digital AudioMOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYN
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDirectFET-SHDirectFET-SHDirectFET-SH
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current4.2 A4.2 A4.2 A
Rds On Drain Source Resistance53 mOhms62 mOhms62 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge8.7 nC8.7 nC-
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation42 W42 W2.2 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameDirectFET--
PackagingReelReelReel
Height0.7 mm0.7 mm0.7 mm
Length4.85 mm4.85 mm4.85 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width3.95 mm3.95 mm3.95 mm
BrandInfineon TechnologiesInfineon / IRInfineon / IR
Fall Time4.3 ns4.3 ns4.3 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.8 ns2.8 ns2.8 ns
Factory Pack Quantity480010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14 ns-14 ns
Typical Turn On Delay Time7.4 ns-7.4 ns
Part # AliasesSP001559710SP001564530-
Vgs th Gate Source Threshold Voltage-5 V-
Forward Transconductance Min-6.6 S-
Moisture Sensitive-YesYes
Unit Weight-0.017637 oz-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRF6665TRPBF MOSFET 100V 1 x N-CH HEXFET for Digital Audio
IRF6665TR1 MOSFET N-CH 100V DIRECTFET-SH
IRF6665TR1PBF MOSFET N-CH 100V 4.2A DIRECTFET
IRF6665TRPBF RF Bipolar Transistors MOSFET 100V 1 x N-CH HEXFET for Digital Audio
Infineon / IR
Infineon / IR
IRF6665TR1PBF MOSFET 100V N-CH DirectFET for Digital Audio
IRF6665TR1 MOSFET DIGITAL AUDIO 100V 1 N-CH HEXFET
IRF6665TRPBF. 신규 및 오리지널
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