TC58BYG2S0HBAI6

Mfr. #:: TC58BYG2S0HBAI6
제조사:: Toshiba Memory
설명:: IC FLASH 4G PARALLEL 67VFBGA Benand
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TC58BYG2S0HBAI6 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TC58BYG2S0HBAI6 추가 정보

제품 속성
속성 값

제조사: 도시바 반도체 및 스토리지

제품 카테고리: 메모리

시리즈: 베낭

포장: 쟁반

패키지 케이스: 67-VFBGA

작동 온도: -40°C ~ 85°C (TA)

상호 작용: 평행 한

전압 공급: 1.7 V ~ 1.95 V

공급자-장치-패키지: 67-VFBGA (6.5x8)

메모리 크기: 4G (512M x 8)

메모리형: EEPROM - 낸드

속도: 25ns

포맷 메모리: EEPROM - 직렬

Tags: TC58BYG2, TC58BY, TC58B, TC58, TC5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TC58BYG2S0HBAI6 추가 정보

SLC NAND and BENAND: Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory.

Market price

부분 #	제조	설명	재고	가격
TC58BYG2S0HBAI6 DISTI # V99:2348_18853859	Toshiba America Electronic Components	NAND Flash Serial 1.8V 4G-bit 512M x 8 67-Pin VFBGA	54	2500:$3.2800 1000:$3.3730 500:$3.5060 250:$3.6570 100:$3.7020 50:$4.0780 10:$4.1460 1:$4.5210
TC58BYG2S0HBAI6 DISTI # TC58BYG2S0HBAI6-ND	Toshiba Semiconductor and Storage Products	IC FLASH 4G PARALLEL 67VFBGA RoHS: Compliant Min Qty: 1 Container: Tray	188In Stock	1014:$3.6619 676:$3.8246 338:$4.0793 100:$4.0950 50:$4.5648 25:$4.5964 10:$4.6860 1:$5.1300
TC58BYG2S0HBAI6 DISTI # TC58BYG2S0HBAI6	Toshiba America Electronic Components	4Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TC58BYG2S0HBAI6) RoHS: Compliant Min Qty: 338 Container: Tray	Americas - 0	338:$3.8900 676:$3.7900 1352:$3.6900 2028:$3.6900 3380:$3.5900
TC58BYG2S0HBAI6 DISTI # 757-TC58BYG2S0HBAI6	Toshiba America Electronic Components	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) RoHS: Compliant	385	1:$4.9000 10:$4.4700 50:$4.3500 100:$3.9100 250:$3.8900 500:$3.6500 1000:$3.4900

관련 상품

영상	부분 #	설명
	Mfr.#: TC58BYG1S3HBAI6 OMO.#: OMO-TC58BYG1S3HBAI6	NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
	Mfr.#: TC58BYG0S3HBAI6 OMO.#: OMO-TC58BYG0S3HBAI6	NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
	Mfr.#: TC58BYG0S3HBAI4 OMO.#: OMO-TC58BYG0S3HBAI4	NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
	Mfr.#: TC58BYG1S3HBAI4 OMO.#: OMO-TC58BYG1S3HBAI4	NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
	Mfr.#: TC58BYG2S0HBAI6 OMO.#: OMO-TC58BYG2S0HBAI6	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TC58BYG0S3HAI6 OMO.#: OMO-TC58BYG0S3HAI6-1190	신규 및 오리지널
	Mfr.#: TC58BYG2S0HBAI6 OMO.#: OMO-TC58BYG2S0HBAI6-TOSHIBA-MEMORY-AMERICA	IC FLASH 4G PARALLEL 67VFBGA Benand
	Mfr.#: TC58BYG1S3HBAI4_REEL OMO.#: OMO-TC58BYG1S3HBAI4-REEL-1151	SLC NAND Flash Serial 1.8V 2Gbit 256M x 8Bit 63-Pin TFBGA (Alt: TC58BYG1S3HBAI4)
	Mfr.#: TC58BYG0S3HBAI6-ND OMO.#: OMO-TC58BYG0S3HBAI6-ND-1190	신규 및 오리지널
	Mfr.#: TC58BYG2S0HBAI4-ND OMO.#: OMO-TC58BYG2S0HBAI4-ND-1190	신규 및 오리지널