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IRF6626TR1PBF

IRF6626TR1PBF
Mfr. #:
IRF6626TR1PBF
제조사:
Infineon / IR
설명:
MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF6626TR1PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6626TR1PBF DatasheetIRF6626TR1PBF Datasheet (P4-P6)IRF6626TR1PBF Datasheet (P7-P9)IRF6626TR1PBF Datasheet (P10)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
DirectFET-ST
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
16 A
Rds On - 드레인 소스 저항:
7.1 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
19 nC
Pd - 전력 손실:
42 W
구성:
하나의
포장:
릴
키:
0.7 mm
길이:
4.85 mm
트랜지스터 유형:
1 N-Channel
너비:
3.95 mm
상표:
인피니언 / IR
습기에 민감한:
네
상품 유형:
MOSFET
공장 팩 수량:
1000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001530896
Tags
IRF6626T, IRF6626, IRF662, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET ST ;RoHS Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N, DIRECTFET, 30V, ST; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:4mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.35V; Case Style:ST; Termination Type:SMD; Base Number:6626; Current, Idm Pulse:130A; Power Dissipation:2.2mW; SMD Marking:2.2; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V
부분 # 제조 설명 재고 가격
IRF6626TR1PBF
DISTI # IRF6626TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6626TR1PBF
    DISTI # IRF6626TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6626TR1PBF
      DISTI # IRF6626TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 16A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6626TR1PBF
        DISTI # 70018834        		Infineon Technologies AG30V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET ST PKG
        RoHS: Compliant        		0
        • 1000:$1.8500
        • 2000:$1.7000
        IRF6626TR1PBF
        DISTI # 942-IRF6626TR1PBF        		Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
        RoHS: Compliant        		0
          IRF6626TR1
          DISTI # 942-IRF6626TR1          		Infineon Technologies AGMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
          RoHS: Not compliant          		0
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            유효성
            재고:
            Available
            주문 시:
            3000
            수량 입력:
            IRF6626TR1PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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