IRF6626T

IRF6626TR1PBF vs IRF6626TRPBF vs IRF6626TR1

 
PartNumberIRF6626TR1PBFIRF6626TRPBFIRF6626TR1
DescriptionMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nCMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nCMOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYN
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDirectFET-STDirectFET-STDirectFET-ST
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current16 A16 A16 A
Rds On Drain Source Resistance7.1 mOhms7.1 mOhms5.4 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge19 nC19 nC1.8 nC
Pd Power Dissipation42 W42 W2.2 W
ConfigurationSingleSingleSingle
PackagingReelReelReel
Height0.7 mm0.7 mm0.7 mm
Length4.85 mm4.85 mm4.85 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width3.95 mm3.95 mm3.95 mm
BrandInfineon / IRInfineon / IRInfineon / IR
Moisture SensitiveYesYesYes
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity100048001000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesSP001530896SP001531678SP001531662
Minimum Operating Temperature--- 40 C
Maximum Operating Temperature--+ 150 C
Channel Mode--Enhancement
Type--DirectFET Power MOSFET
Fall Time--4.5 ns
Rise Time--15 ns
Typical Turn Off Delay Time--17 ns
Typical Turn On Delay Time--13 ns
제조사 부분 # 설명 RFQ
Infineon / IR
Infineon / IR
IRF6626TR1PBF MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
IRF6626TRPBF MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
IRF6626TR1 MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
Infineon Technologies
Infineon Technologies
IRF6626TRPBF MOSFET N-CH 30V 16A DIRECTFET
IRF6626TR1 MOSFET N-CH 30V 16A DIRECTFET
IRF6626TR1PBF MOSFET N-CH 30V 16A DIRECTFET
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