T2G6000528-Q3

T2G6000528-Q3
Mfr. #:
T2G6000528-Q3
제조사:
Qorvo
설명:
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
T2G6000528-Q3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
T2G6000528-Q3 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
T2G
포장
쟁반
부분 별칭
1099997
기술
GaN SiC
트랜지스터형
헴트
Tags
T2G6000528-Q, T2G6000, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
부분 # 제조 설명 재고 가격
T2G6000528-Q3
DISTI # 772-T2G6000528-Q3
QorvoRF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
RoHS: Compliant
291
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3 28V
DISTI # 772-T2G6000528-Q328V
QorvoRF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
RoHS: Compliant
75
  • 1:$80.4000
  • 25:$68.0500
  • 100:$57.6000
T2G6000528-Q3EVB3
DISTI # 772-T2G6000528-Q3EV
QorvoRF Development Tools 3-3.3GHz Eval Board
RoHS: Compliant
2
  • 1:$875.0000
T2G6000528-Q3, EVAL BOARD
DISTI # 772-T2G6000528-Q3EB
QorvoRF Development Tools DC-6.0GHz 10 Watt 28V GaN Eval Brd
RoHS: Compliant
0
  • 1:$875.0000
영상 부분 # 설명
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3

RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3-318

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL-318

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6001528-SG, EVAL BOAR

Mfr.#: T2G6001528-SG, EVAL BOAR

OMO.#: OMO-T2G6001528-SG-EVAL-BOAR-1190

신규 및 오리지널
T2G6003028

Mfr.#: T2G6003028

OMO.#: OMO-T2G6003028-1190

신규 및 오리지널
T2G6003028-FL-EVB

Mfr.#: T2G6003028-FL-EVB

OMO.#: OMO-T2G6003028-FL-EVB-1190

신규 및 오리지널
T2G6003028-FS-EVB1

Mfr.#: T2G6003028-FS-EVB1

OMO.#: OMO-T2G6003028-FS-EVB1-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
2000
수량 입력:
T2G6000528-Q3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$86.40
US$86.40
10
US$82.08
US$820.80
100
US$77.76
US$7 776.00
500
US$73.44
US$36 720.00
1000
US$69.12
US$69 120.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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