SQJ402EP-T1_GE3

Mfr. #:: SQJ402EP-T1_GE3
제조사:: Vishay
설명:: MOSFET N-CH 100V POWERPAK SO8L
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SQJ402EP-T1_GE3 데이터 시트
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ECAD Model:
추가 정보:: SQJ402EP-T1_GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 / 실리콘닉스

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

시리즈: SQ 시리즈

포장: 릴

장착 스타일: SMD/SMT

상표명: TrenchFET

패키지 케이스: SO-8L-4

기술: 시

구성: 하나의

Pd 전력 손실: 83 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

가을철: 7 ns

상승 시간: 10 ns

Vgs 게이트 소스 전압: +/- 20 V

Id-연속-드레인-전류: 32 A

Vds-드레인-소스-고장-전압: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2 V

Rds-On-Drain-Source-Resistance: 11 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 27 ns

일반 켜기 지연 시간: 10 ns

Qg-Gate-Charge: 34 nC

Tags: SQJ402, SQJ40, SQJ4, SQJ

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJ402EP-T1_GE3 추가 정보

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

부분 #	제조	설명	재고	가격
SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V POWERPAK SO8L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	18762In Stock	1000:$0.8412 500:$1.0527 100:$1.3436 10:$1.6870 1:$1.9000
SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V POWERPAK SO8L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	18762In Stock	1000:$0.8412 500:$1.0527 100:$1.3436 10:$1.6870 1:$1.9000
SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V POWERPAK SO8L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	3000:$0.7654
SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1_GE3	Vishay Intertechnologies	N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 100 V, 32 A, 11 mΩ - Tape and Reel (Alt: SQJ402EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.6789 6000:$0.6589 12000:$0.6319 18000:$0.6139 30000:$0.5979
SQJ402EP-T1_GE3 DISTI # SQJ402EP-T1-GE3	Vishay Intertechnologies	N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 100 V, 32 A, 11 mΩ - Tape and Reel (Alt: SQJ402EP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQJ402EP-T1_GE3 DISTI # 76Y1528	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) 175C MOSFET	0	2500:$0.6440 1000:$0.7000 500:$0.8120 100:$0.9290 50:$1.0500 25:$1.1600 10:$1.2700 1:$1.6400
SQJ402EP-T1_GE3 DISTI # 78-SQJ402EP-T1_GE3	Vishay Intertechnologies	MOSFET 100V 32A 27watt AEC-Q101 Qualified RoHS: Compliant	5264	1:$1.6400 10:$1.3500 100:$1.0400 500:$0.8870 1000:$0.7010
SQJ402EP-T1-GE3 DISTI # 78-SQJ402EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 RoHS: Compliant	0
SQJ402EPT1GE3	Vishay Intertechnologies	Power Field-Effect Transistor RoHS: Compliant	Europe - 3000
SQJ402EP-T1-GE3	Vishay Intertechnologies		159
SQJ402EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 RoHS: Compliant	Americas -

영상	부분 #	설명
	Mfr.#: SQJ402EP-T1_GE3 OMO.#: OMO-SQJ402EP-T1-GE3-32A	MOSFET 100V 32A 27watt AEC-Q101 Qualified
	Mfr.#: SQJ402EP-T1-GE3 OMO.#: OMO-SQJ402EP-T1-GE3-E3F	MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3
	Mfr.#: SQJ402EP-T1-GE3 OMO.#: OMO-SQJ402EP-T1-GE3-126	IGBT Transistors MOSFET 100V 32A 27watt N-CH Automotive
	Mfr.#: SQJ402EP-T1_GE3 OMO.#: OMO-SQJ402EP-T1-GE3-VISHAY	MOSFET N-CH 100V POWERPAK SO8L
	Mfr.#: SQJ402EP OMO.#: OMO-SQJ402EP-1190	신규 및 오리지널
	Mfr.#: SQJ402EPT1GE3 OMO.#: OMO-SQJ402EPT1GE3-1190	Power Field-Effect Transisto

SQJ402EP-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes