PartNumber | SQJ401EP-T1_GE3 | SQJ401EP-T2_GE3 | SQJ402EP-T1-GE3 |
Description | MOSFET P-Channel 12V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3 | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8L-4 | SO-8L-4 | PowerPAK-SO-8L-4 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 12 V | 12 V | - |
Id Continuous Drain Current | 32 A | 32 A | - |
Rds On Drain Source Resistance | 5 mOhms | 6 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 600 mV | - |
Vgs Gate Source Voltage | 8 V | 8 V | - |
Qg Gate Charge | 164 nC | 109 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 83 W | 83 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.04 mm | - | 1.04 mm |
Length | 6.15 mm | - | 6.15 mm |
Series | SQ | SQ | SQ |
Transistor Type | 1 P-Channel | - | - |
Width | 5.13 mm | - | 5.13 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 60 S | - | - |
Fall Time | 166 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 63 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 263 ns | - | - |
Typical Turn On Delay Time | 43 ns | - | - |
Unit Weight | 0.017870 oz | - | 0.017870 oz |
제조사 | 부분 # | 설명 | RFQ |
---|---|---|---|
Vishay / Siliconix |
SQJ415EP-T1_GE3 | MOSFET -40V Vds; +/-20V Vgs PowerPAK SO-8L | |
SQJ414EP-T1_GE3 | MOSFET Dual N-Ch 30V AEC-Q101 Qualified | ||
SQJ420EP-T1_GE3 | MOSFET 40V Vds -/+20V Vgs AEC-Q101 Qualified | ||
SQJ407EP-T1_GE3 | MOSFET -30V Vds PowerPAK AEC-Q101 Qualified | ||
SQJ431EP-T1_GE3 | MOSFET -200v -12A 83W AEC-Q101 Qualified | ||
SQJ422EP-T1_GE3 | MOSFET -40V 75A 83W AEC-Q101 Qualified | ||
SQJ423EP-T1_GE3 | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | ||
SQJ401EP-T1_GE3 | MOSFET P-Channel 12V AEC-Q101 Qualified | ||
SQJ403EP-T1_GE3 | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | ||
SQJ410EP-T1_GE3 | MOSFET N-Channel 30V AEC-Q101 Qualified | ||
SQJ402EP-T1_GE3 | MOSFET 100V 32A 27watt AEC-Q101 Qualified | ||
SQJ418EP-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | ||
SQJ412EP-T1_GE3 | MOSFET 40V 32A 83W AEC-Q101 Qualified | ||
SQJ403BEEP-T1_GE3 | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | ||
SQJ416EP-T1_GE3 | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | ||
SQJ431AEP-T1_GE3 | MOSFET -200V Vds 20V Vgs PowerPAK SO-8L | ||
SQJ401EP-T2_GE3 | MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3 | ||
SQJ418EP-T2_GE3 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8L | ||
SQJ412EP-T2_GE3 | MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3 | ||
SQJ431EP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SQJ431EP-T1_GE3 | ||
SQJ402EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 | ||
SQJ412EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3 | ||
SQJ412EP-T1-GE3 | IGBT Transistors MOSFET 40V 32A 83W N-Ch Automotive | ||
SQJ431EP-T1-GE3 | IGBT Transistors MOSFET -200v -12A 83W TrenchFET | ||
SQJ402EP-T1-GE3 | IGBT Transistors MOSFET 100V 32A 27watt N-CH Automotive | ||
SQJ410EP-T1-GE3 | RF Bipolar Transistors MOSFET N-Channel 30V Automotive MOSFET | ||
SQJ401EP-T1-GE3 | RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET | ||
SQJ401EP-T1 | 신규 및 오리지널 | ||
SQJ401EPT1GE3 | Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
SQJ402EP | 신규 및 오리지널 | ||
SQJ402EPT1GE3 | Power Field-Effect Transisto | ||
SQJ403EEP | 신규 및 오리지널 | ||
SQJ403EEP-SO-8L | 신규 및 오리지널 | ||
SQJ403EEP-T1-GE3 | MOSFET P-Channel 30V Automotive MOSFET | ||
SQJ403EEP-TE2-GE3 | 신규 및 오리지널 | ||
SQJ411EP | 신규 및 오리지널 | ||
SQJ414EP | 신규 및 오리지널 | ||
SQJ418EP | 신규 및 오리지널 | ||
SQJ422EP-T1-GE3 | N-CHANNEL 40-V (D-S) 175C MOSF | ||
SQJ423EP-T1-GE3 | 신규 및 오리지널 | ||
Vishay |
SQJ409EP-T1_GE3 | MOSFET P-CH 40V 60A POWERPAKSO-8 | |
SQJ412EP-T1_GE3 | MOSFET N-CH 40V 32A PPAK SO-8 | ||
SQJ402EP-T1_GE3 | MOSFET N-CH 100V POWERPAK SO8L | ||
SQJ410EP-T1_GE3 | MOSFET N-CH 30V 32A POWERPAKSO-8 | ||
SQJ401EP-T1_GE3 | MOSFET P-CH 12V 32A POWERPAKSO-8 | ||
SQJ403BEEP-T1_GE3 | MOSFET P-CH 30V 30A POWERPAKSO-8 | ||
SQJ407EP-T1_GE3 | MOSFET P-CH 30V 60A POWERPAKSO-8 | ||
SQJ414EP-T1_GE3 | MOSFET N-CH 30V 30A POWERPAKSOL | ||
SQJ420EP-T1_GE3 | MOSFET N-CH 40V 30A POWERPAKSOL | ||
SQJ422EP-T1_GE3 | MOSFET N-CH 40V 75A PPAK SO-8 |