SQJQ100E-T1_GE3

Mfr. #:: SQJQ100E-T1_GE3
제조사:: Vishay
설명:: MOSFET N-CH 40V 200A POWERPAK8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SQJQ100E-T1_GE3 데이터 시트
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추가 정보:: SQJQ100E-T1_GE3 추가 정보

제품 속성
속성 값

Tags: SQJQ1, SQJQ, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJQ100E-T1_GE3 설명

***ical: Trans MOSFET N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK

***et Europe: N-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ

***i-Key: MOSFET N-CH 40V 200A POWERPAK8

***ark: MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:136W; Transistor Case Style:PowerPAK; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

***nell: MOSFET, AEC-Q101, CA-N, 40V, POWERPAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:200A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):900µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:PowerPAK; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)

SQJQ100E-T1_GE3 추가 정보

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

부분 #	제조	설명	재고	가격
SQJQ100E-T1_GE3 DISTI # V72:2272_17600386	Vishay Intertechnologies	SQJQ100E-T1_GE3**MULT1 9172 3107023	0
SQJQ100E-T1_GE3 DISTI # V99:2348_17600386	Vishay Intertechnologies	SQJQ100E-T1_GE3**MULT1 9172 3107023	0	2000:$1.3190
SQJQ100E-T1_GE3 DISTI # SQJQ100E-T1_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 200A POWERPAK8 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	On Order	6000:$1.2285 2000:$1.2757
SQJQ100E-T1_GE3 DISTI # SQJQ100E-T1_GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 200A POWERPAK8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.4114 500:$1.7034 100:$2.0732 10:$2.5790 1:$2.8700
SQJQ100E-T1_GE3 DISTI # SQJQ100E-T1_GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 200A POWERPAK8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.4114 500:$1.7034 100:$2.0732 10:$2.5790 1:$2.8700
SQJQ100E-T1_GE3 DISTI # SQJQ100E-T1_GE3	Vishay Intertechnologies	N-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ - Tape and Reel (Alt: SQJQ100E-T1_GE3) RoHS: Not Compliant Min Qty: 2000 Container: Reel	Americas - 0	12000:$1.0900 20000:$1.0900 4000:$1.1900 8000:$1.1900 2000:$1.2900
SQJQ100E-T1_GE3 DISTI # 20AC4001	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSFET	0	10000:$1.1300 6000:$1.1700 4000:$1.2200 2000:$1.3500 1000:$1.4300 1:$1.5200
SQJQ100E-T1_GE3 DISTI # 78-SQJQ100E-T1_GE3	Vishay Intertechnologies	MOSFET 40V Vds 160A Id AEC-Q101 Qualified RoHS: Compliant	0	1:$2.7900 10:$2.3200 100:$1.8000 500:$1.5700 1000:$1.3000 2000:$1.2100 4000:$1.1700
SQJQ100E-T1_GE3 DISTI # 2708322	Vishay Intertechnologies	MOSFET, AEC-Q101, N-CH, 40V, POWERPAK RoHS: Compliant	0	1000:$2.1300 500:$2.5700 100:$3.1300 10:$3.8900 1:$4.3300
SQJQ100E-T1_GE3 DISTI # 2708322	Vishay Intertechnologies	MOSFET, AEC-Q101, N-CH, 40V, POWERPAK	0	500:£1.2700 250:£1.4200 100:£1.4600 10:£1.7700 1:£2.4200

영상	부분 #	설명
	Mfr.#: SQJQ100E-T1_GE3 OMO.#: OMO-SQJQ100E-T1-GE3	MOSFET 40V Vds 160A Id AEC-Q101 Qualified
	Mfr.#: SQJQ100EL-T1_GE3 OMO.#: OMO-SQJQ100EL-T1-GE3	MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
	Mfr.#: SQJQ100E-T1_GE3 OMO.#: OMO-SQJQ100E-T1-GE3-VISHAY	MOSFET N-CH 40V 200A POWERPAK8
	Mfr.#: SQJQ100EL OMO.#: OMO-SQJQ100EL-1190	신규 및 오리지널
	Mfr.#: SQJQ100EL-T1_GE3 OMO.#: OMO-SQJQ100EL-T1-GE3-VISHAY	MOSFET N-CH 40V 200A POWERPAK8

SQJQ100E-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes