CGHV96050F1

Mfr. #:: CGHV96050F1
제조사:: N/A
설명:: RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV96050F1 데이터 시트
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ECAD Model:
추가 정보:: CGHV96050F1 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 21.8 dB

트랜지스터 극성:: N-채널

Id - 연속 드레인 전류:: 1.7 A

출력 파워:: 178 W

최대 드레인 게이트 전압:: 65 V

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

Pd - 전력 손실:: 67 W

장착 스타일:: SMD/SMT

패키지/케이스:: DFN-6

포장:: 릴

애플리케이션:: 군용 레이더, 방해 전파, 테스트 계측, 광대역 또는 협대역 증폭기, 육상 이동 및 군사

구성:: 싱글 트리플 드레인

동작 주파수:: 1.2 GHz to 2.7 GHz

상표:: 코르보

개발 키트:: QPD1013EVB01

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

Tags: CGHV960, CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96050F1 설명

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96050F1 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

부분 #	제조	설명	재고	가격
CGHV96050F1 DISTI # CGHV96050F1-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	12In Stock	1:$458.6800
CGHV96050F1-TB DISTI # CGHV96050F1-TB-ND	Wolfspeed	BOARD TEST FIXTURE FOR CGHV96050 RoHS: Compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$550.0000
CGHV96050F1 DISTI # 941-CGHV96050F1	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt RoHS: Compliant	50	1:$458.6800
CGHV96050F1-TB DISTI # 941-CGHV96050F1-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	1	1:$550.0000

관련 상품

영상	부분 #	설명
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB-WOLFSPEED	BOARD TEST FIXTURE FOR CGHV96050
	Mfr.#: CGHV96050F2-TB OMO.#: OMO-CGHV96050F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96050F2
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96100F2
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
	Mfr.#: CGHV96050F2 OMO.#: OMO-CGHV96050F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT