CGHV96050F2

Mfr. #:: CGHV96050F2
제조사:: N/A
설명:: RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV96050F2 데이터 시트
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ECAD Model:
추가 정보:: CGHV96050F2 추가 정보

제품 속성
속성 값

제조사: 크리어

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 쟁반

장착 스타일: 나사

작동 온도 범위: - 40 C to + 150 C

패키지 케이스: 440210

기술: GaN SiC

구성: 하나의

트랜지스터형: 헴트

얻다: 10 dB

등급: -

출력 파워: 50 W

Pd 전력 손실: -

최대 작동 온도: + 150 C

최소 작동 온도: - 40 C

애플리케이션: -

동작 주파수: 8.4 GHz to 9.6 GHz

Id-연속-드레인-전류: 6 A

Vds-드레인-소스-고장-전압: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.3 V

Rds-On-Drain-Source-Resistance: -

트랜지스터 극성: N-채널

순방향 트랜스컨덕턴스-최소: -

개발 키트: CGHV96050F2-TB

Vgs-Gate-Source-Breakdown-Voltage: 3 V

게이트 소스 차단 전압: - 10 V to + 2 V

최대 드레인 게이트 전압: -

NF-노이즈-피겨: -

P1dB-압축점: -

Tags: CGHV960, CGHV9, CGHV, CGH

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96050F2 설명

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96050F2 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

부분 #	제조	설명	재고	가격
CGHV96050F2 DISTI # CGHV96050F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	98In Stock	1:$458.6800
CGHV96050F2-TB DISTI # CGHV96050F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96050F2 RoHS: Compliant Min Qty: 1 Container: Bulk	3In Stock	1:$550.0000
CGHV96050F2 DISTI # 941-CGHV96050F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt RoHS: Compliant	5	1:$458.6800
CGHV96050F2-TB DISTI # 941-CGHV96050F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	2	1:$550.0000
CGHV96050F2-TB DISTI # CGHV96050F2-TB	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	2	2:$550.0000

관련 상품

영상	부분 #	설명
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
	Mfr.#: CGHV96050F2 OMO.#: OMO-CGHV96050F2	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGHV96050F1-TB OMO.#: OMO-CGHV96050F1-TB-WOLFSPEED	BOARD TEST FIXTURE FOR CGHV96050
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96100F2
	Mfr.#: CGHV96100F2 OMO.#: OMO-CGHV96100F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 100W GaN Gain 12.4dB 50OHM
	Mfr.#: CGHV96050F2 OMO.#: OMO-CGHV96050F2-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W GaN Gain 11.dB typ.
	Mfr.#: CGHV96050F1 OMO.#: OMO-CGHV96050F1-WOLFSPEED	RF JFET Transistors 7.9-9.6GHz 50W 50ohm Gain 15.6dB GaN HEMT