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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ATR-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ACT-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ADKR-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # 551-NE3512S02-T1C-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3512S02-T1C-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 6000 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: NE3512S02-A OMO.#: OMO-NE3512S02-A |
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch |
|
Mfr.#: NE3512S02-T1D-A OMO.#: OMO-NE3512S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
Mfr.#: NE3512S02-A OMO.#: OMO-NE3512S02-A-CEL |
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch |
|
|
Mfr.#: NE3512S02-T1C-A OMO.#: OMO-NE3512S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
|
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Mfr.#: NE3512S02-T1D-AJT OMO.#: OMO-NE3512S02-T1D-AJT-1190 |
신규 및 오리지널 |
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Mfr.#: NE3512S02 OMO.#: OMO-NE3512S02-1190 |
신규 및 오리지널 |
|
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Mfr.#: NE3512S02-T1 OMO.#: OMO-NE3512S02-T1-1190 |
신규 및 오리지널 |
|
|
Mfr.#: NE3512S02-T1C OMO.#: OMO-NE3512S02-T1C-1190 |
신규 및 오리지널 |
|
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Mfr.#: NE3512S02-T1D OMO.#: OMO-NE3512S02-T1D-1190 |
신규 및 오리지널 |
|
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Mfr.#: NE3512S02-T1D-A/JT OMO.#: OMO-NE3512S02-T1D-A-JT-1190 |
신규 및 오리지널 |