BSZ22DN20NS3GATMA1

BSZ22DN20NS3GATMA1
Mfr. #:
BSZ22DN20NS3GATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 200V 7A 8TSDSON
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSZ22DN20NS3GATMA1 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
BSZ22DN20NS3GATMA1 추가 정보
제품 속성
속성 값
Tags
BSZ22, BSZ2, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSZ22DN20NS3GATMA1
***p One Stop Global
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
***ical
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON
***ark
MOSFET, N CH, 200V, 7A, TSDSON-8
***i-Key
MOSFET N-CH 200V 7A 8TDSON
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 200V, 7A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:34W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 200V, 7A, TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.194ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:34W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
부분 # 제조 설명 재고 가격
BSZ22DN20NS3GATMA1
DISTI # V36:1790_06384496
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # V72:2272_06384496
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
664
  • 500:$0.5384
  • 250:$0.5510
  • 100:$0.6122
  • 25:$0.7147
  • 10:$0.8735
  • 1:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 25000:$0.3799
  • 10000:$0.3839
  • 5000:$0.3988
BSZ22DN20NS3GATMA1
DISTI # 33128679
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # 32736050
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.3501
BSZ22DN20NS3GATMA1
DISTI # 31984785
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant
664
  • 16:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Bulk (Alt: BSZ22DN20NS3GATMA1)
Min Qty: 962
Container: Bulk
Americas - 0
  • 9620:$0.3299
  • 4810:$0.3359
  • 2886:$0.3479
  • 1924:$0.3609
  • 962:$0.3739
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ22DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3619
  • 30000:$0.3689
  • 20000:$0.3819
  • 10000:$0.3959
  • 5000:$0.4109
BSZ22DN20NS3GATMA1
DISTI # SP000781794
Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP (Alt: SP000781794)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.3329
  • 30000:€0.3579
  • 20000:€0.3879
  • 10000:€0.4229
  • 5000:€0.5179
BSZ22DN20NS3GATMA1
DISTI # 85X4160
Infineon Technologies AGMOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V RoHS Compliant: Yes0
    BSZ22DN20NS3 G
    DISTI # 726-BSZ22DN20NS3G
    Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    12720
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1
    DISTI # 726-BSZ22DN20NS3GATM
    Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant
    218
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    122641
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    BSZ22DN20NS3GATMA1
    DISTI # 2443374
    Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant
    0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    BSZ22DN20NS3GATMA1
    DISTI # 2443374RL
    Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant
    0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    영상 부분 # 설명
    BSZ22DN20NS3 G

    Mfr.#: BSZ22DN20NS3 G

    OMO.#: OMO-BSZ22DN20NS3-G

    MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    BSZ22DN20NS3GATMA1

    Mfr.#: BSZ22DN20NS3GATMA1

    OMO.#: OMO-BSZ22DN20NS3GATMA1

    MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    BSZ22DN20NS3 G

    Mfr.#: BSZ22DN20NS3 G

    OMO.#: OMO-BSZ22DN20NS3-G-1190

    Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
    BSZ22DN20NS3G

    Mfr.#: BSZ22DN20NS3G

    OMO.#: OMO-BSZ22DN20NS3G-1190

    Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSZ22DN20NS3GATMA1

    Mfr.#: BSZ22DN20NS3GATMA1

    OMO.#: OMO-BSZ22DN20NS3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 200V 7A 8TSDSON
    유효성
    재고:
    Available
    주문 시:
    2000
    수량 입력:
    BSZ22DN20NS3GATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.54
    US$0.54
    10
    US$0.52
    US$5.16
    100
    US$0.49
    US$48.86
    500
    US$0.46
    US$230.70
    1000
    US$0.43
    US$434.30
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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