 | |  | |
| PartNumber | BSC117N08NS5ATMA1 | BSC110N15NS5ATMA1 | BSC112N06LDATMA1 |
| Description | MOSFET N-Ch 80V 49A TDSON-8 | MOSFET MV POWER MOS | MOSFET TRENCH 40<-<100V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | PG-TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 150 V | 60 V |
| Id Continuous Drain Current | 49 A | 76 A | 20 A |
| Rds On Drain Source Resistance | 11.7 mOhms | 11 mOhms | 11.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 3 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 16 V |
| Qg Gate Charge | 15 nC | 28 nC | 55 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 50 W | 125 W | 65 W |
| Configuration | Single | Single | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | BSC112N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 2 N-Channel |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 19 S | 29 S | - |
| Development Kit | EVAL_1K4W_ZVS_FB_CFD7 | - | - |
| Fall Time | 3 ns | 2.9 ns | 7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 3.3 ns | 3 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 14.5 ns | 51 ns |
| Typical Turn On Delay Time | 10 ns | 10.3 ns | 11 ns |
| Part # Aliases | BSC117N08NS5 SP001295028 | BSC110N15NS5 SP001181418 | BSC112N06LD SP002594372 |
| Unit Weight | 0.017870 oz | 0.007041 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC123N08NS3 G | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | |
| BSC117N08NS5ATMA1 | MOSFET N-Ch 80V 49A TDSON-8 | ||
| BSC118N10NS G | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC120N03LS G | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | ||
| BSC120N03LSGATMA1 | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | ||
| BSC120N03MSGATMA1 | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | ||
| BSC110N15NS5ATMA1 | MOSFET MV POWER MOS | ||
| BSC120N03MS G | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | ||
| BSC112N06LDATMA1 | MOSFET TRENCH 40<-<100V | ||
| BSC110N15NS5ATMA1 | MOSFET N-CH 150V 76A 8TDSON | ||
| BSC119N03S G | MOSFET N-CH 30V 30A TDSON-8 | ||
| BSC120N03LS G | Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC120N03LS G) | ||
| BSC120N03LSGATMA1 | MOSFET N-CH 30V 39A TDSON-8 | ||
| BSC120N03MS G | Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP | ||
| BSC120N03MSGATMA1 | MOSFET N-CH 30V 39A TDSON-8 | ||
| BSC123N08NS3 G | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP | ||
| BSC118N10NSGATMA1 | MOSFET N-CH 100V 71A TDSON-8 | ||
| BSC118N10NS G | Darlington Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC117N08NS5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 49A TDSON-8 | ||
Infineon Technologies |
BSC118N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC118N10NS | 신규 및 오리지널 | ||
| BSC118N10NS3G | 신규 및 오리지널 | ||
| BSC118N10NSGATMA1 , TDZ1 | 신규 및 오리지널 | ||
| BSC119N03LSG | 신규 및 오리지널 | ||
| BSC119N03MSC G | MOSFET N-KANAL POWER MOS | ||
| BSC119N03S G | 신규 및 오리지널 | ||
| BSC119N03SG 119N03S | 신규 및 오리지널 | ||
| BSC119N3S | 신규 및 오리지널 | ||
| BSC120 | 신규 및 오리지널 | ||
| BSC120N03LS G 120N03LS | 신규 및 오리지널 | ||
| BSC120N03LSG , TDZ15J , | 신규 및 오리지널 | ||
| BSC120N03LSGATMA1 , TDZ1 | 신규 및 오리지널 | ||
| BSC120N03MSG , TDZ3V6J , | 신규 및 오리지널 | ||
| BSC120N03MSG,30V,39A, | 신규 및 오리지널 | ||
| BSC120N03MSGATMA1 , TDZ5 | 신규 및 오리지널 | ||
| BSC120N03S | 신규 및 오리지널 | ||
| BSC117N08NS5 | 신규 및 오리지널 | ||
| BSC120N03LSGATMA1-CUT TAPE | 신규 및 오리지널 | ||
| BSC119N03MSC | 신규 및 오리지널 | ||
| BSC119N03S | 신규 및 오리지널 | ||
| BSC119N03SG | 신규 및 오리지널 | ||
| BSC119N3SG | 신규 및 오리지널 | ||
| BSC120N03LS | 신규 및 오리지널 | ||
| BSC120N03MS | 신규 및 오리지널 | ||
| BSC120N03MSG | Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP (Alt: BSC120N03MS G) | ||
| BSC123N08N | 신규 및 오리지널 | ||
| BSC123N08NS3 | 신규 및 오리지널 | ||
| BSC119N03MSCG | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC120N03LSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC118N10NSG | Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |