 | | | |
| PartNumber | BSC160N15NS5ATMA1 | BSC160N10NS3GATMA1 | BSC16DN25NS3 G |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | PG-TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 100 V | 250 V |
| Id Continuous Drain Current | 56 A | 42 A | 10.9 A |
| Rds On Drain Source Resistance | 16 mOhms | 13.9 mOhms | 165 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
| Qg Gate Charge | 19 nC | 25 nC | 8.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 96 W | 60 W | 62.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 20 S | 21 S | 7 S |
| Fall Time | 2.6 ns | 5 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 15 ns | 4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10.8 ns | 22 ns | 11 ns |
| Typical Turn On Delay Time | 9.6 ns | 13 ns | 6 ns |
| Part # Aliases | BSC160N15NS5 SP001181422 | BSC160N10NS3 BSC16N1NS3GXT G SP000482382 | BSC16DN25NS3GATMA1 BSC16DN25NS3GXT SP000781782 |
| Unit Weight | 0.004198 oz | 0.010582 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC160N15NS5ATMA1 | MOSFET MV POWER MOS | |
| BSC190N15NS3 G | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | ||
| BSC190N15NS3GATMA1 | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | ||
| BSC16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
| BSC190N12NS3 G | MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3 | ||
| BSC196N10NS G | MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2 | ||
| BSC16DN25NS3GATMA1 | MOSFET N-CH 250V 10.9A 8TDSON | ||
| BSC190N12NS3GATMA1 | MOSFET N-CH 120V 44A TDSON-8 | ||
| BSC190N15NS3GATMA1 | MOSFET N-CH 150V 50A TDSON-8 | ||
| BSC196N10NSGATMA1 | MOSFET N-CH 100V 45A TDSON-8 | ||
| BSC160N10NS3GATMA1 | MOSFET N-CH 100V 42A TDSON-8 | ||
| BSC160N15NS5ATMA1 | MOSFET N-CH 150V 56A 8TDSON | ||
Infineon Technologies |
BSC190N12NS3GATMA1 | MOSFET MV POWER MOS | |
| BSC196N10NSGATMA1 | MOSFET MV POWER MOS | ||
| BSC160N10NS3GATMA1 , TDZ | 신규 및 오리지널 | ||
| BSC16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
| BSC16DN25NS3G | 신규 및 오리지널 | ||
| BSC16DN25NS3GCT-ND | 신규 및 오리지널 | ||
| BSC190N04LSG | 신규 및 오리지널 | ||
| BSC190N12NS3 G | Trans MOSFET N-CH 120V 8.6A 8-Pin TDSON T/R (Alt: BSC190N12NS3 G) | ||
| BSC190N12NS3G | 신규 및 오리지널 | ||
| BSC190N15NS | 신규 및 오리지널 | ||
| BSC190N15NS3 | 신규 및 오리지널 | ||
| BSC190N15NS3 G | Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP | ||
| BSC190N15NS3G | Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R | ||
| BSC190N15NS3GS | 신규 및 오리지널 | ||
| BSC196N10NS | 신규 및 오리지널 | ||
| BSC196N10NS G | MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2 | ||
| BSC196N10NSG | 신규 및 오리지널 | ||
| BSC196N10NSGATMA1 , TDZF | 신규 및 오리지널 |