 |  | | |
| PartNumber | HGT1S12N60A4DS | HGT1S12N60A4 | HGT1S12N60A4D |
| Description | IGBT Transistors 12A 600V N-Ch | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-263AB-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.7 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 54 A | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGT1S12N60A4DS | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 54 A | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 60 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGT1S12N60A4DS_NL | - | - |
| Unit Weight | 0.046296 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGT1S12N60A4S9A | IGBT Transistors 600V N-Channel IGBT SMPS Series | |
| HGT1S12N60A4DS | IGBT Transistors 12A 600V N-Ch | ||
| HGT1S12N60A4 | 신규 및 오리지널 | ||
| HGT1S12N60A4D | 신규 및 오리지널 | ||
| HGT1S12N60A4DS9A | 신규 및 오리지널 | ||
| HGT1S12N60B3G | 신규 및 오리지널 | ||
| HGT1S12N60C3DS9A | 신규 및 오리지널 | ||
| HGT1S12N60C3DST | 신규 및 오리지널 | ||
| HGT1S12N60C3S | 신규 및 오리지널 | ||
| HGT1S12N60C3S9A | 신규 및 오리지널 | ||
ON Semiconductor |
HGT1S12N60A4DS | IGBT 600V 54A 167W D2PAK | |
| HGT1S12N60A4S9A | IGBT 600V 54A 167W TO263AB | ||
| HGT1S12N60B3D | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA | ||
| HGT1S12N60B3DS | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB | ||
| HGT1S12N60B3S | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB | ||
| HGT1S12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA | ||
| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS) | ||
| HGT1S12N60C3S9AR4501 | 신규 및 오리지널 |