 | |  | |
| PartNumber | IPB100N08S2-07 | IPB100N06S3L-03 | IPB100N06S3L-04 |
| Description | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | MOSFET N-Ch 55V 100A D2PAK-2 | MOSFET N-CH 55V 100A TO-263 |
| Manufacturer | Infineon | Infineon | INF |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3, DPak (2 Leads + Tab), TO-263AB |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | 55 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 7.1 mOhms | 2.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 16 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Cut Tape (CT) |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 30 ns | 77 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 51 ns | 70 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 61 ns | 110 ns | - |
| Typical Turn On Delay Time | 26 ns | 39 ns | - |
| Part # Aliases | IPB100N08S207ATMA1 IPB1N8S27XT SP000219044 | IPB100N06S3L03XT | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Series | - | - | OptiMOS |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 55V |
| Current Continuous Drain (Id) @ 25°C | - | - | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 5V, 10V |
| Vgs(th) (Max) @ Id | - | - | 2.2V @ 150A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 362nC @ 10V |
| Vgs (Max) | - | - | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 17270pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 214W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 3.5 mOhm @ 80A, 10V |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TO263-3-2 |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB100N12S305ATMA1 | MOSFET N-CHANNEL 100+ | |
| IPB107N20NAXT | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB107N20NA | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB107N20N3 G | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | ||
| IPB108N15N3 G | MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 | ||
| IPB100N08S2L07ATMA1 | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | ||
| IPB100N08S2-07 | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | ||
| IPB100N08S2L-07 | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | ||
| IPB107N20N3GATMA1 | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | ||
| IPB100N10S3-05 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | ||
| IPB107N20NAATMA1 | MOSFET Mosfet, DCtoDC Nchannel 200V | ||
| IPB100N08S2L07ATMA1 | MOSFET N-CH 75V 100A TO263-3 | ||
| IPB100N08S207ATMA1 | MOSFET N-CH 75V 100A TO263-3 | ||
| IPB100N12S305ATMA1 | MOSFET N-CH 120V 100A TO263-3 | ||
| IPB107N20NAXT | MOSFET N-Ch 200V 88A D2PAK-2 | ||
| IPB100N06S3L-03 | MOSFET N-CH 55V 100A TO263-3-2 | ||
| IPB100N06S3L-04 | MOSFET N-CH 55V 100A TO-263 | ||
| IPB100N10S3-05 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS-T | ||
| IPB100N10S305ATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB107N20N3 G | Trans MOSFET N-CH 200V 88A 3-Pin TO-263 T/R (Alt: IPB107N20N3 G) | ||
| IPB107N20N3GATMA1 | MOSFET N-CH 200V 88A TO263-3 | ||
| IPB107N20NA | - Bulk (Alt: IPB107N20NA) | ||
| IPB107N20NAATMA1 | MOSFET N-CH 200V 88A TO263-3 | ||
| IPB108N15N3 G | Trans MOSFET N-CH 150V 83A 3-Pin TO-263 T/R (Alt: IPB108N15N3 G) | ||
| IPB108N15N3GATMA1 | MOSFET N-CH 150V 83A TO263-3 | ||
| IPB100N08S2-07 | RF Bipolar Transistors MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | ||
| IPB100N08S2L-07 | RF Bipolar Transistors MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | ||
Infineon Technologies |
IPB100N10S305ATMA1 | MOSFET N-CHANNEL_100+ | |
| IPB108N15N3GATMA1 | MOSFET MV POWER MOS | ||
| IPB100N08S207ATMA1 | MOSFET N-CHANNEL_75/80V | ||
| IPB107N20N3G | POWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.0107OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB107N20 | 신규 및 오리지널 | ||
| IPB107N20N3 | 신규 및 오리지널 | ||
| IPB108N15N3G 108N15N | 신규 및 오리지널 | ||
| IPB100N08S2L-07(PN08L07) | 신규 및 오리지널 | ||
| IPB100N10S3-05(1) | 신규 및 오리지널 | ||
| IPB100N10S3-05. | 신규 및 오리지널 | ||
| IPB100N12S3-05 | 신규 및 오리지널 | ||
| IPB100P03L-04 | 신규 및 오리지널 | ||
| IPB107N20N3G 107N20N | 신규 및 오리지널 | ||
| IPB107N20N3G , 2SD1949K- | 신규 및 오리지널 | ||
| IPB107N20N3G 0.2W | 신규 및 오리지널 | ||
| IPB107N20N3GS | 신규 및 오리지널 | ||
| IPB107N20N3GXT | 신규 및 오리지널 | ||
| IPB107N20NA 107N20NA | 신규 및 오리지널 | ||
| IPB108N15N3 | 신규 및 오리지널 | ||
| IPB108N15N3GS | 신규 및 오리지널 | ||
| IPB10N03 | 신규 및 오리지널 | ||
| IPB100P03P3L-04 | - Bulk (Alt: IPB100P03P3L-04) | ||
| IPB108N15N3G | Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |