NTD5867NLT4

NTD5867NLT4G vs NTD5867NLT4G 5867 vs NTD5867NLT4G-CUT TAPE

 
PartNumberNTD5867NLT4GNTD5867NLT4G 5867NTD5867NLT4G-CUT TAPE
DescriptionMOSFET NFET DPAK 60V 18A 43 MOHM
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance39 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation36 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandON Semiconductor--
Forward Transconductance Min8 S--
Fall Time2.4 ns--
Product TypeMOSFET--
Rise Time12.6 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18.2 ns--
Typical Turn On Delay Time6.5 ns--
Unit Weight0.139332 oz--
제조사 부분 # 설명 RFQ
NTD5867NLT4G MOSFET NFET DPAK 60V 18A 43 MOHM
NTD5867NLT4G 5867 신규 및 오리지널
NTD5867NLT4G-CUT TAPE 신규 및 오리지널
ON Semiconductor
ON Semiconductor
NTD5867NLT4G MOSFET N-CH 60V 20A DPAK
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