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SEMIX303GB12E4 vs SEMIX303GB12E4S vs SEMIX303GB12V

 
PartNumberSEMIX303GB12E4SEMIX303GB12E4SSEMIX303GB12V
DescriptionIGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
  • 시작
  • SEM 492
제조사 부분 # 설명 RFQ
SEMIX303GB12E4 신규 및 오리지널
SEMIX303GB12E4S IGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX303GB12V 신규 및 오리지널
SEMIX303GB12VS 신규 및 오리지널
SEMIX303GD12E4C 신규 및 오리지널
SEMIX303GD12T4C 신규 및 오리지널
SEMIX303GD12VC 신규 및 오리지널
SEMIX341D16S RECTIFIER MODULE, 1.6KV, 340A, SEMIX 13S, No. of Phases:Three Phase, Repetitive Reverse Voltage Vrrm Max:1.6kV, Forward Current If(AV):340A, Bridge Rectifier Case Style:Module, Forward Voltage VF
SEMIX352GAL128DS 신규 및 오리지널
SEMIX352GAR128DS 신규 및 오리지널
SEMIX352GB128D 신규 및 오리지널
SEMIX352GB128DS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
SEMIX353GB126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX353GB126V1 신규 및 오리지널
SEMIX353GB126V3 신규 및 오리지널
SEMIX353GB128DS 신규 및 오리지널
SEMIX353GB176HDS 신규 및 오리지널
SEMIX353GD126HDC SEMIX, Trench IGBT Module, 1200V, 300A
SEMIX353GD126HDS 신규 및 오리지널
SEMIX402GA066HDS 신규 및 오리지널
SEMIX402GAL066HDS SEMIX, Trench IGBT Module, 600V, 400A
SEMIX402GB066HDS IGBT MODULE, DUAL, 600V, 530A, Transistor Polarity:Dual NPN, DC Collector Current:530A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX403GB128D 신규 및 오리지널
SEMIX404GB12E4S SEMIX, Trench IGBT Module, 1200V, 400A
SEMIX452GAR12 신규 및 오리지널
SEMIX452GB126HD 신규 및 오리지널
SEMIX453GB12E4 신규 및 오리지널
SEMIX453GB12E4P 신규 및 오리지널
SEMIX453GB12E4S IGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo
SEMIX453GB12T4S Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel
SEMIX453GB12VS 신규 및 오리지널
SEMIX453GB176HDS IGBT MODULE, 1.7KV, 444A, SEMIX 3S, Transistor Polarity:N Channel, DC Collector Current:444A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Voltage
SEMIX453GD12VC 신규 및 오리지널
SEMIX501D17FS SEMIX, Trench IGBT Module, 1700V, 800A
SEMIX503GB126HDS IGBT, 1200 V, 490 A @ 25 DegC, 480 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX503GB126V3 신규 및 오리지널
SEMIX553GB128DS 신규 및 오리지널
SEMIX603GAR066HDS SEMIX, Trench IGBT Module, 600V, 800A
SEMIX603GB066HDS 신규 및 오리지널
SEMIX603GB12E4P SEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A
SEMIX604GAL12E4S SEMIX, Trench IGBT Module, 1200V, 800A
SEMIX604GB126HDS SEMIX, Trench IGBT Module, 1200V, 400A
SEMIX604GB12T4V6 신규 및 오리지널
SEMIX604GB12VS IGBT MODULE, DUAL, 1.2KV, 880A, Transistor Polarity:Dual NPN, DC Collector Current:880A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br
SEMIX653GAL176HDS IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX402GB066HD 신규 및 오리지널
SEMIX553GB128D 신규 및 오리지널
SEMIX604GB12E4S 신규 및 오리지널
SEMIX604GB12T4S POWER IGBT TRANSISTOR
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