PartNumber | SQD100N03-3M4_GE3 | SQD100N03-3M2L_GE3 | SQD100N04-3M6-GE3 |
Description | MOSFET 30V 100A 136W N-Channel MOSFET | MOSFET 30V 100A 136W N-Channel MOSFET | MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 2.8 mOhms | 2.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 124 nC | 116 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 136 W | 136 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SQ | SQ | SQ |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 108 S | 122 S | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 10 ns | - |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 42 ns | - |
Typical Turn On Delay Time | 13 ns | 10 ns | - |
Unit Weight | 0.050717 oz | 0.050717 oz | - |
Height | - | 2.38 mm | - |
Length | - | 6.73 mm | - |
Width | - | 6.22 mm | - |