SI4800BDY-T1-GE3

SI4800BDY-T1-GE3
Mfr. #:
SI4800BDY-T1-GE3
제조사:
Vishay
설명:
MOSFET N-CH 30V 6.5A 8-SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4800BDY-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SI4800BDY-T1-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
FET - 단일
포장
부분 별칭
SI4800BDY-GE3
단위 무게
0.006596 oz
장착 스타일
SMD/SMT
패키지 케이스
SOIC-Narrow-8
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
1.3 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
12 ns
상승 시간
12 ns
Vgs 게이트 소스 전압
25 V
Id-연속-드레인-전류
6.5 A
Vds-드레인-소스-고장-전압
30 V
Rds-On-Drain-Source-Resistance
18.5 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
32 ns
일반 켜기 지연 시간
7 ns
Qg-Gate-Charge
13 nC
채널 모드
상승
Tags
SI4800BDY-T1, SI4800BDY-T, SI4800BDY, SI4800BD, SI4800B, SI4800, SI480, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
***ure Electronics
N-CH REDUCED QG, FAST SWITCHING MOSF
***ment14 APAC
N CHANNEL MOSFET, 30V, 9A, SOIC; Transis; N CHANNEL MOSFET, 30V, 9A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:25V; Threshold Voltage Vgs Typ:25V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
부분 # 제조 설명 재고 가격
SI4800BDY-T1-GE3
DISTI # V72:2272_09216570
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
2492
  • 1000:$0.3323
  • 500:$0.4074
  • 250:$0.4273
  • 100:$0.4748
  • 25:$0.5960
  • 10:$0.5985
  • 1:$0.6943
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4727In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4727In Stock
  • 1000:$0.3484
  • 500:$0.4355
  • 100:$0.5880
  • 10:$0.7620
  • 1:$0.8700
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.3066
SI4800BDY-T1-GE3
DISTI # 25790146
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
RoHS: Compliant
2492
  • 1000:$0.3323
  • 500:$0.4074
  • 250:$0.4273
  • 100:$0.4748
  • 25:$0.5960
  • 20:$0.5985
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.3219
  • 5000:$0.3129
  • 10000:$0.2999
  • 15000:$0.2919
  • 25000:$0.2839
SI4800BDY-T1-GE3
DISTI # SI4800BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.3619
  • 5000:€0.2469
  • 10000:€0.2129
  • 15000:€0.1959
  • 25000:€0.1829
SI4800BDY-T1-GE3
DISTI # 16P3753
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.8800
  • 10:$0.7210
  • 25:$0.6650
  • 50:$0.6090
  • 100:$0.5530
  • 250:$0.5150
  • 500:$0.4760
SI4800BDY-T1-GE3.
DISTI # 16AC0256
Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,Power Dissipation Pd:1.3W,No. of Pins:8Pins , RoHS Compliant: No0
  • 1:$0.3220
  • 5000:$0.3130
  • 10000:$0.3000
  • 15000:$0.2920
  • 25000:$0.2840
SI4800BDY-T1-GE3
DISTI # 781-SI4800BDY-T1-GE3
Vishay IntertechnologiesMOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
RoHS: Compliant
154
  • 1:$0.8800
  • 10:$0.7210
  • 100:$0.5530
  • 500:$0.4760
  • 1000:$0.3750
  • 2500:$0.3500
SI4800BDYT1GE3Vishay Intertechnologies 
RoHS: Compliant
Europe - 2500
    SI4800BDY-T1-GE3
    DISTI # C1S803603715371
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
    RoHS: Compliant
    2492
    • 250:$0.4273
    • 100:$0.4748
    • 25:$0.5960
    • 10:$0.5985
    영상 부분 # 설명
    SI4800BDY-T1-GE3

    Mfr.#: SI4800BDY-T1-GE3

    OMO.#: OMO-SI4800BDY-T1-GE3

    MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
    SI4800BDY-T1-E3-CUT TAPE

    Mfr.#: SI4800BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4800BDY-T1-E3-CUT-TAPE-1190

    신규 및 오리지널
    SI4800BDY-T1-GE3-CUT TAPE

    Mfr.#: SI4800BDY-T1-GE3-CUT TAPE

    OMO.#: OMO-SI4800BDY-T1-GE3-CUT-TAPE-1190

    신규 및 오리지널
    SI4800BDY-T

    Mfr.#: SI4800BDY-T

    OMO.#: OMO-SI4800BDY-T-1190

    신규 및 오리지널
    SI4800BDY-T1

    Mfr.#: SI4800BDY-T1

    OMO.#: OMO-SI4800BDY-T1-1190

    신규 및 오리지널
    SI4800BDY-T1-E

    Mfr.#: SI4800BDY-T1-E

    OMO.#: OMO-SI4800BDY-T1-E-1190

    신규 및 오리지널
    SI4800BDY-T1-E3

    Mfr.#: SI4800BDY-T1-E3

    OMO.#: OMO-SI4800BDY-T1-E3-VISHAY

    MOSFET N-CH 30V 6.5A 8-SOIC
    SI4800BDY-T1-E3 SOP8

    Mfr.#: SI4800BDY-T1-E3 SOP8

    OMO.#: OMO-SI4800BDY-T1-E3-SOP8-1190

    신규 및 오리지널
    SI4800BDY-T1-E3.

    Mfr.#: SI4800BDY-T1-E3.

    OMO.#: OMO-SI4800BDY-T1-E3--1190

    Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di
    SI4800BDY-T1-GE3

    Mfr.#: SI4800BDY-T1-GE3

    OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY

    MOSFET N-CH 30V 6.5A 8-SOIC
    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    SI4800BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.31
    US$0.31
    10
    US$0.30
    US$2.96
    100
    US$0.28
    US$28.06
    500
    US$0.26
    US$132.50
    1000
    US$0.25
    US$249.40
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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