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SIHB12N50E-GE3

SIHB12N50E-GE3
Mfr. #:
SIHB12N50E-GE3
제조사:
Vishay
설명:
IGBT Transistors MOSFET N-Channel 500V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHB12N50E-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIHB12N50E-GE3 추가 정보
제품 속성
속성 값
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
***ark
Transistor Polarity:N Channel
***et
N-CHANNEL 500V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 10.5A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		12In Stock
  • 1000:$1.2282
  • 500:$1.4823
  • 100:$1.9058
  • 10:$2.3720
  • 1:$2.6300
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N50E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1199
  • 2000:$1.0869
  • 4000:$1.0429
  • 6000:$1.0139
  • 10000:$0.9869
SIHB12N50E-GE3
DISTI # 43Y2393		Vishay IntertechnologiesMOSFET Transistor, N Channel, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V RoHS Compliant: Yes747
  • 1:$2.4000
  • 10:$1.9900
  • 25:$1.8400
  • 50:$1.6900
  • 100:$1.5400
  • 250:$1.4500
  • 500:$1.3500
SIHB12N50E-GE3
DISTI # 78-SIHB12N50E-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		997
  • 1:$2.4000
  • 10:$1.9900
  • 100:$1.5400
  • 500:$1.3500
  • 1000:$1.2900
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 5:£1.6100
  • 25:£1.5000
  • 100:£1.1700
  • 250:£1.1000
  • 500:£1.0200
SIHB12N50E-GE3
DISTI # 2471937RL		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		0
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3
DISTI # 2471937		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant		747
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    영상 부분 # 설명
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3

    		 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3

    		 MOSFET N-Channel 500V
    SIHB12N60ET5-GE3

    Mfr.#: SIHB12N60ET5-GE3

    OMO.#: OMO-SIHB12N60ET5-GE3

    		 MOSFET N-Channel 600V
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3-VISHAY

    		 Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    		 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB12N65E

    Mfr.#: SIHB12N65E

    OMO.#: OMO-SIHB12N65E-1190

    		 신규 및 오리지널
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 12A TO263
    SIHB12N60ET5-GE3

    Mfr.#: SIHB12N60ET5-GE3

    OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY

    		 MOSFET N-CH 600V 12A TO263
    유효성
    재고:
    Available
    주문 시:
    3500
    수량 입력:
    SIHB12N50E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.48
    US$1.48
    10
    US$1.41
    US$14.06
    100
    US$1.33
    US$133.23
    500
    US$1.26
    US$629.15
    1000
    US$1.18
    US$1 184.30
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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