TH58BYG2S3HBAI6

Mfr. #:: TH58BYG2S3HBAI6
제조사:: Toshiba Memory
설명:: IC FLASH 4G PARALLEL 67VFBGA Benand
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TH58BYG2S3HBAI6 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TH58BYG2S3HBAI6 추가 정보

제품 속성
속성 값

제조사: 도시바 반도체 및 스토리지

제품 카테고리: 메모리

시리즈: 베낭

포장: 쟁반

패키지 케이스: 67-VFBGA

작동 온도: -40°C ~ 85°C (TA)

상호 작용: 평행 한

전압 공급: 1.7 V ~ 1.95 V

공급자-장치-패키지: 67-VFBGA (6.5x8)

메모리 크기: 4G (512M x 8)

메모리형: EEPROM - 낸드

속도: 25ns

포맷 메모리: EEPROM - 직렬

Tags: TH58BYG2, TH58BY, TH58B, TH58, TH5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TH58BYG2S3HBAI6 설명

***et: 4GB SLC BENAND 24NM BGA 6.5X8 1.8V (EEPROM) 2K PAGE

***i-Key: IC FLASH 4G PARALLEL 67VFBGA

***ical: NAND Flash Memory

TH58BYG2S3HBAI6 추가 정보

SLC NAND and BENAND: Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory.

Market price

부분 #	제조	설명	재고	가격
TH58BYG2S3HBAI6 DISTI # V99:2348_13896577	Toshiba America Electronic Components	NAND Flash Memory	169	2500:$3.4650 1000:$3.6110 500:$4.0780 250:$4.4460 100:$4.8060 25:$5.2650 10:$5.7210 1:$6.2610
TH58BYG2S3HBAI6 DISTI # TH58BYG2S3HBAI6-ND	Toshiba Semiconductor and Storage Products	IC FLASH 4G PARALLEL 67VFBGA RoHS: Compliant Min Qty: 338 Container: Tray	Temporarily Out of Stock	338:$4.8951
TH58BYG2S3HBAI6 DISTI # TH58BYG2S3HBAI6	Toshiba America Electronic Components	4GB SLC BENAND 24NM BGA6.5X8 1.8V (EEPROM) 2K PAGE - Trays (Alt: TH58BYG2S3HBAI6) RoHS: Compliant Min Qty: 338 Container: Tray	Americas - 0	338:$4.5900 676:$4.5900 1352:$4.4900 2028:$4.3900 3380:$4.2900
TH58BYG2S3HBAI6 DISTI # 757-TH58BYG2S3HBAI6	Toshiba America Electronic Components	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) RoHS: Compliant	0	338:$5.1100 676:$4.6500 1014:$4.0600

관련 상품

영상	부분 #	설명
	Mfr.#: TH58BYG3S0HBAI6 OMO.#: OMO-TH58BYG3S0HBAI6	NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TH58BYG2S3HBAI4 OMO.#: OMO-TH58BYG2S3HBAI4	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TH58BYG3S0HBAI4 OMO.#: OMO-TH58BYG3S0HBAI4	NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TH58BYG2S3HBAI6 OMO.#: OMO-TH58BYG2S3HBAI6	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
	Mfr.#: TH58BYG2S3HBAI6 OMO.#: OMO-TH58BYG2S3HBAI6-TOSHIBA-MEMORY-AMERICA	IC FLASH 4G PARALLEL 67VFBGA Benand
	Mfr.#: TH58BYG3S0HBAI6 OMO.#: OMO-TH58BYG3S0HBAI6-TOSHIBA-MEMORY-AMERICA	8GB SLC NAND 24NM BGA 6.5X8 1.8V Benand
	Mfr.#: TH58BYG2S3HBAI4 OMO.#: OMO-TH58BYG2S3HBAI4-TOSHIBA-MEMORY-AMERICA	4G SLC NAND BGA 24NM Benand
	Mfr.#: TH58BYG3S0HBAI4 OMO.#: OMO-TH58BYG3S0HBAI4-1190	8GB SLC BENAND 24NM BGA 9X11 1.8
	Mfr.#: TH58BYG2S3HBAI4-ND OMO.#: OMO-TH58BYG2S3HBAI4-ND-1190	신규 및 오리지널
	Mfr.#: TH58BYG3S0HBAI6-ND OMO.#: OMO-TH58BYG3S0HBAI6-ND-1190	신규 및 오리지널