 | | | |
| PartNumber | SI2307BDS-T1-E3 | SI2307CDS-T1-GE3 | SI2307CDS-T1-E3 |
| Description | MOSFET 30V 3.2A 1.25W | MOSFET -30V Vds 20V Vgs SOT-23 | MOSFET -30V Vds 20V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 2.5 A | 3.5 A | 3.5 A |
| Rds On Drain Source Resistance | 78 mOhms | 88 mOhms | 88 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 9 nC | 4.1 nC | 4.1 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 0.75 W | 1.8 W | 1.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | 1.45 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 1.6 mm | 1.6 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5 S | 7 S | 7 S |
| Fall Time | 14 ns | 7.7 ns | 7.7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 13 ns | 13 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 17 ns | 17 ns |
| Typical Turn On Delay Time | 9 ns | 5.5 ns | 5.5 ns |
| Part # Aliases | SI2307BDS-E3 | SI2307CDS-GE3 | SI2307CDS-E3 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2308CDS-T1-GE3 | MOSFET 60V Vds 20V Vgs SOT-23 | |
| SI2308BDS-T1-GE3 | MOSFET 60V Vds 20V Vgs SOT-23 | ||
| SI2307BDS-T1-E3 | MOSFET 30V 3.2A 1.25W | ||
| SI2307CDS-T1-GE3 | MOSFET -30V Vds 20V Vgs SOT-23 | ||
| SI2307CDS-T1-E3 | MOSFET -30V Vds 20V Vgs SOT-23 | ||
| SI2308BDS-T1-E3 | MOSFET 60V Vds 20V Vgs SOT-23 | ||
| SI2309CDS-T1-GE3 | MOSFET -60V Vds 20V Vgs SOT-23 | ||
| SI2309CDS-T1-E3 | MOSFET -60V Vds 20V Vgs SOT-23 | ||
| SI2308DS-T1-E3 | MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 | ||
Rectron |
SI2309DS | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | |
| SI2309DS | MOSFET Plastic-Encapsulated MOSFET P-CH-60V | ||
Vishay |
SI2307BDS-T1-GE3 | MOSFET P-CH 30V 2.5A SOT23-3 | |
| SI2307CDS-T1-E3 | MOSFET P-CH 30V 3.5A SOT23-3 | ||
| SI2307CDS-T1-GE3 | MOSFET P-CH 30V 3.5A SOT23-3 | ||
| SI2308BDS-T1-E3 | MOSFET N-CH 60V 2.3A SOT23-3 | ||
| SI2308BDS-T1-GE3 | MOSFET N-CH 60V 2.3A SOT23-3 | ||
| SI2308DS-T1-E3 | MOSFET N-CH 60V 2A SOT23-3 | ||
| SI2309CDS-T1-E3 | MOSFET P-CH 60V 1.6A SOT23-3 | ||
| SI2309CDS-T1-GE3 | MOSFET P-CH 60V 1.6A SOT23-3 | ||
| SI2308CDS-T1-GE3 | MOSFET N-CH 60V 2.6A SOT23-3 | ||
| SI2307BDS-T1-E3 | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R | ||
| SI2307CDS | 신규 및 오리지널 | ||
| SI2307CDS-T1 | 신규 및 오리지널 | ||
| SI2307DS | MOSFET Transistor, P-Channel, TO-236AB | ||
| SI2307DS-T1-GE3 | 신규 및 오리지널 | ||
| SI2308 | 신규 및 오리지널 | ||
| SI2308BDS | 신규 및 오리지널 | ||
| SI2308BDS-T1-GE3 , MAX64 | 신규 및 오리지널 | ||
| SI2308DS | 신규 및 오리지널 | ||
| SI2308DS-T1-E3/B02 | 신규 및 오리지널 | ||
| SI2308DS-T1-ES , MAX6425 | 신규 및 오리지널 | ||
| SI2308DS-T1-GE3 | N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3 | ||
| SI2309 | 신규 및 오리지널 | ||
| SI2309ADS-T1-GE3 | 신규 및 오리지널 | ||
| SI2309BDS-T1-E3 | 신규 및 오리지널 | ||
| SI2309CDS | 신규 및 오리지널 | ||
| SI2309CDS SOT23-3 | 신규 및 오리지널 | ||
| SI2309CDS-TI-GE3 | 신규 및 오리지널 | ||
| SI2309DS , M1MA151KT2 | 신규 및 오리지널 | ||
| SI2309DS-T1 | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 | ||
| SI2307BDS-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
| SI2307CDS-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
| SI2308BDS-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
| SI2308BDS-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
| SI2309CDS-T1-E3-CUT TAPE | 신규 및 오리지널 | ||
| SI2309CDS-T1-GE3-CUT TAPE | 신규 및 오리지널 | ||
| SI2307DS-T1 | MOSFET RECOMMENDED ALT 781-SI2307BDS-E3 | ||
| SI2307DS-T1-E3 | MOSFET 30V 3.0A 1.25W | ||
| SI2307DS-TI | 신규 및 오리지널 | ||
| SI2308DS-T1 | MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3 |