TGF2952

Mfr. #:: TGF2952
제조사:: Qorvo
설명:: RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2952 데이터 시트
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ECAD Model:
추가 정보:: TGF2952 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 20.4 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 32 V

Id - 연속 드레인 전류:: 480 mA

출력 파워:: 38.4 dBm

최대 드레인 게이트 전압:: 100 V

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 10.5 W

장착 스타일:: SMD/SMT

패키지/케이스:: 주사위

포장:: 젤팩

구성:: 하나의

동작 주파수:: 15 GHz

작동 온도 범위:: - 65 C to + 150 C

상표:: 코르보

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1111797

Tags: TGF295, TGF29, TGF2, TGF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2952 설명

***W: RF Power Transistor, DC to 14 GHz, 7 W, 20.4 dB, 32 V, GaN, DIE

TGF2952 추가 정보

TGF GaN on SiC Transistors: Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
TGF2952 DISTI # 772-TGF2952	Qorvo	RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm RoHS: Compliant	0	50:$30.2800 100:$26.1900 250:$24.6200
1111797 DISTI # TGF2952	Qorvo	RF POWER TRANSISTOR RoHS: Compliant	0	1:$17.1900

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